公开(公告)号：US11574948B2

公开(公告)日：2023-02-07

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Kwansik Kim ,  Dongchan Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Taeyon Lee ,  Hajin Lim

IPC: H01L27/146 ,  H01L51/44 ,  H01L29/786

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

公开(公告)号：US11502117B2

公开(公告)日：2022-11-15

申请号：US16900072

申请日：2020-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoun-Jee Ha ,  Changhwa Kim

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first surface and a second surface facing each other, a plurality of photoelectric conversion regions disposed in the substrate, an isolation pattern disposed in the substrate between the photoelectric conversion regions, a conductive connection pattern disposed on the isolation pattern and in a trench penetrating the first surface of the substrate, and a first impurity region disposed in the substrate and adjacent to the first surface of the substrate. A first sidewall of the conductive connection pattern is in contact with the first impurity region. A dopant included in the conductive connection pattern includes the same element as an impurity doped in the first impurity region.

公开(公告)号：US11335637B2

公开(公告)日：2022-05-17

申请号：US16508555

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Kong Siew ,  Wei Hsiung Tseng ,  Changhwa Kim

IPC: H01L29/66 ,  H01L23/535 ,  H01L23/485 ,  H01L21/768 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L29/165 ,  H01L21/285

Abstract: A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region with an etch stop layer interposed therebetween, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.

公开(公告)号：US20210104577A1

公开(公告)日：2021-04-08

申请号：US17122070

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Sejung Park ,  Junghun Kim ,  Sangsu Park ,  Kyungrae Byun ,  Beom Suk Lee

IPC: H01L27/30 ,  H01L51/44

Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

公开(公告)号：US20200219928A1

公开(公告)日：2020-07-09

申请号：US16658855

申请日：2019-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-SU PARK ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/223 ,  H01L21/762

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

公开(公告)号：US10396034B2

公开(公告)日：2019-08-27

申请号：US15493965

申请日：2017-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Kong Siew ,  Wei Hsiung Tseng ,  Changhwa Kim

IPC: H01L21/76 ,  H01L23/535 ,  H01L21/768 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug. An interval between the first contact plug and the second contact plug may be about 10 nm or less.