公开(公告)号：US20230081312A1

公开(公告)日：2023-03-16

申请号：US17748127

申请日：2022-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehoon KIM

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: An embedded device includes a substrate including a magnetic random access memory (MRAM) region, the MRAM region having a cell block region, magnetic tunnel junction (MTJ) modules in the cell block region, each of the MTJ modules including a MTJ pattern, an insulating interlayer structure covering the MTJ modules, and magnetic field shielding structures in the insulating interlayer structure and adjacent to an outside of the cell block region, each of the magnetic field shielding structures extending in a vertical direction to face at least from an upper end of the MTJ pattern to a lower end of the MTJ pattern, and each of the magnetic field shielding structures including a ferromagnetic material.