公开(公告)号：US20200042435A1

公开(公告)日：2020-02-06

申请号：US16600313

申请日：2019-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Krishna T. Malladi ,  Jongmin Gim ,  Hongzhong Zheng

IPC: G06F12/02 ,  G06F13/16

Abstract: A pseudo main memory system. The system includes a memory adapter circuit for performing memory augmentation using compression, deduplication, and/or error correction. The memory adapter circuit is connected to a memory, and employs the memory augmentation methods to increase the effective storage capacity of the memory. The memory adapter circuit is also connected to a memory bus and implements an NVDIMM-F or modified NVDIMM-F interface for connecting to the memory bus.