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公开(公告)号:US20160172394A1
公开(公告)日:2016-06-16
申请号:US14966587
申请日:2015-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Ki Lee , Joonkyoung Lee
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.
Abstract translation: 图像传感器包括:衬底,包括第一表面和第二表面;第一器件隔离层,设置在衬底中并限定衬底中的多个像素,并且具有邻近衬底的第一表面的下表面; 邻近衬底的第二表面。 每个像素包括光电转换元件,与衬底的第一表面相邻的浮动扩散区域和在衬底的第二表面上的栅格图案。 栅格图案中的至少一个不与第一器件隔离层垂直对准。
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公开(公告)号:US12224301B2
公开(公告)日:2025-02-11
申请号:US18398981
申请日:2023-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Ki Lee , Jong Hoon Park , Jun Sung Park
IPC: H01L27/146 , H10K59/13
Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.
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公开(公告)号:US20250006771A1
公开(公告)日:2025-01-02
申请号:US18746889
申请日:2024-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghyun Kim , Jonghoon Park , Yun Ki Lee
IPC: H01L27/146
Abstract: An image sensor includes a first sub-pixel group including a plurality of first unit pixels, a first color filter, a first micro lens at least partially overlapping the plurality of first unit pixels, a second sub-pixel group including a plurality of second unit pixels, a second color filter, a second micro lens at least partially overlapping the plurality of second unit pixels, a third sub-pixel group including a plurality of third unit pixels, a third color filter, a third micro lens at least partially overlapping the plurality of third unit pixels, a first dead zone in which the first micro lens does not overlap the first sub-pixel group, a second dead zone in which the second micro lens does not overlap the second sub-pixel group, and a third dead zone in which the third micro lens does not overlap the third sub-pixel group.
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公开(公告)号:US12176366B2
公开(公告)日:2024-12-24
申请号:US17453253
申请日:2021-11-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dong Min Keum , Yun Ki Lee , Jun Sung Park , Dong Kyu Lee , Bum Suk Kim , Kwang Hee Lee , Tae Sung Lee
IPC: H01L27/146 , H04N25/79
Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.
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公开(公告)号:US12062676B2
公开(公告)日:2024-08-13
申请号:US17464655
申请日:2021-09-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jun Sung Park , Jin Ho Kim , Yun Ki Lee , Bum Suk Kim , Jung-Saeng Kim , Dong Kyu Lee , Tae Sung Lee
IPC: H01L27/00 , H01L27/146 , H04N25/79
CPC classification number: H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H04N25/79
Abstract: An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.
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公开(公告)号:US11631710B2
公开(公告)日:2023-04-18
申请号:US17029115
申请日:2020-09-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bomi Kim , BumSuk Kim , Jung-Saeng Kim , Yun Ki Lee , Taesub Jung
IPC: H01L27/146 , H04N5/341
Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.
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公开(公告)号:US11121167B2
公开(公告)日:2021-09-14
申请号:US16451561
申请日:2019-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Ki Lee , Jong Hoon Park , Jun Sung Park
IPC: H01L27/146 , H01L27/32
Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.
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公开(公告)号:US10854655B2
公开(公告)日:2020-12-01
申请号:US16664091
申请日:2019-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Ki Lee
IPC: H01L27/146 , H04N5/361
Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
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公开(公告)号:US10833113B2
公开(公告)日:2020-11-10
申请号:US16405344
申请日:2019-05-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Ki Lee , Min Wook Jung
IPC: H01L27/14 , H01L27/146
Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.
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公开(公告)号:US20200176497A1
公开(公告)日:2020-06-04
申请号:US16750160
申请日:2020-01-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bum Suk Kim , Yun Ki Lee , Jung-Saeng Kim , Jong Hoon Park , Jun Sung Park , Chang Rok Moon
IPC: H01L27/146
Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
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