Image Sensors Including Non-Aligned Grid Patterns
    21.
    发明申请
    Image Sensors Including Non-Aligned Grid Patterns 有权
    图像传感器包括不对齐的网格图案

    公开(公告)号:US20160172394A1

    公开(公告)日:2016-06-16

    申请号:US14966587

    申请日:2015-12-11

    Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

    Abstract translation: 图像传感器包括:衬底,包括第一表面和第二表面;第一器件隔离层,设置在衬底中并限定衬底中的多个像素,并且具有邻近衬底的第一表面的下表面; 邻近衬底的第二表面。 每个像素包括光电转换元件,与衬底的第一表面相邻的浮动扩散区域和在衬底的第二表面上的栅格图案。 栅格图案中的至少一个不与第一器件隔离层垂直对准。

    Back side illumination image sensors and electronic device including the same

    公开(公告)号:US12224301B2

    公开(公告)日:2025-02-11

    申请号:US18398981

    申请日:2023-12-28

    Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

    IMAGE SENSOR
    23.
    发明申请

    公开(公告)号:US20250006771A1

    公开(公告)日:2025-01-02

    申请号:US18746889

    申请日:2024-06-18

    Abstract: An image sensor includes a first sub-pixel group including a plurality of first unit pixels, a first color filter, a first micro lens at least partially overlapping the plurality of first unit pixels, a second sub-pixel group including a plurality of second unit pixels, a second color filter, a second micro lens at least partially overlapping the plurality of second unit pixels, a third sub-pixel group including a plurality of third unit pixels, a third color filter, a third micro lens at least partially overlapping the plurality of third unit pixels, a first dead zone in which the first micro lens does not overlap the first sub-pixel group, a second dead zone in which the second micro lens does not overlap the second sub-pixel group, and a third dead zone in which the third micro lens does not overlap the third sub-pixel group.

    Image sensor with varying same-color color filter thickness

    公开(公告)号:US12176366B2

    公开(公告)日:2024-12-24

    申请号:US17453253

    申请日:2021-11-02

    Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

    Image sensors
    26.
    发明授权

    公开(公告)号:US11631710B2

    公开(公告)日:2023-04-18

    申请号:US17029115

    申请日:2020-09-23

    Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

    Back side illumination image sensors and electronic device including the same

    公开(公告)号:US11121167B2

    公开(公告)日:2021-09-14

    申请号:US16451561

    申请日:2019-06-25

    Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

    Image sensors and methods of forming the same

    公开(公告)号:US10854655B2

    公开(公告)日:2020-12-01

    申请号:US16664091

    申请日:2019-10-25

    Inventor: Yun Ki Lee

    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

    Image sensor and method for fabricating the same

    公开(公告)号:US10833113B2

    公开(公告)日:2020-11-10

    申请号:US16405344

    申请日:2019-05-07

    Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

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