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    Image sensor
    1.
    发明授权
    Image sensor 有权

    公开(公告)号：US11355541B2

    公开(公告)日：2022-06-07

    申请号：US16711295

    申请日：2019-12-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun Ki Lee ,  Jung-Saeng Kim ,  Hyungeun Yoo

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US11297219B2

    公开(公告)日：2022-04-05

    申请号：US16847146

    申请日：2020-04-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bumsuk Kim ,  Kwanhee Lee ,  Yun Ki Lee

    IPC: H04N5/232 ,  H04N5/225 ,  H04N5/378 ,  H04N9/04

    Abstract: An image sensor is disclosed. The image sensor may include pixel groups, which are two-dimensionally arranged on a substrate, and each of the pixel groups including a plurality of pixels. The image sensor may also include a light-blocking pattern, which is disposed on the substrate and between the pixels. The pixel groups may include first image pixel groups sensing a first light, second image pixel groups sensing a second light, and an auto-focus (AF) pixel group detecting a phase. The AF pixel group may include a first AF pixel and a second AF pixel adjacent to each other, and the light-blocking pattern may be absent on the substrate between the first AF pixel and the second AF pixel.

    IMAGE SENSORS AND METHODS OF FORMING THE SAME
    3.
    发明申请
    IMAGE SENSORS AND METHODS OF FORMING THE SAME 审中-公开

    公开(公告)号：US20190252426A1

    公开(公告)日：2019-08-15

    申请号：US16392750

    申请日：2019-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee

    IPC: H01L27/146 ,  H04N5/361

    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20250022900A1

    公开(公告)日：2025-01-16

    申请号：US18618477

    申请日：2024-03-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinyoung KIM ,  Junghyun Kim ,  Junsik Lee ,  Jonghoon Park ,  Yun Ki Lee

    IPC: H01L27/146

    Abstract: An image sensor includes: a substrate including a first side and a second side facing the first side; pixels including a photoelectric conversion layer in the substrate and a transistor on the first side of the substrate; and a pixel separating pattern between the pixels, wherein the pixel separating pattern includes a first separating pattern, a second separating pattern, and a third separating pattern, the second separating pattern is conductive, and the first separating pattern and the third separating pattern are non-conductive, the second separating pattern is nearer the first side of the substrate than is the third separating pattern, and a first end of the first separating pattern, a first end of the second separating pattern, and a first end of the third separating pattern are on the second side of the substrate.

    Image sensors
    7.
    发明授权
    Image sensors 有权

    公开(公告)号：US10811450B2

    公开(公告)日：2020-10-20

    申请号：US16123092

    申请日：2018-09-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bomi Kim ,  BumSuk Kim ,  Jung-Saeng Kim ,  Yun Ki Lee ,  Taesub Jung

    IPC: H01L27/146 ,  H04N5/341

    Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

    Image sensors and methods of forming the same
    8.
    发明授权
    Image sensors and methods of forming the same 有权

    公开(公告)号：US10707255B2

    公开(公告)日：2020-07-07

    申请号：US16392750

    申请日：2019-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee

    IPC: H01L27/146 ,  H04N5/361

    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

    Image sensor and method for fabricating the same
    9.
    发明授权
    Image sensor and method for fabricating the same 有权

    公开(公告)号：US10283540B2

    公开(公告)日：2019-05-07

    申请号：US15857695

    申请日：2017-12-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee ,  Min Wook Jung

    IPC: H01L27/146

    Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

    Image sensors and methods of forming the same
    10.
    发明授权
    Image sensors and methods of forming the same 有权

    公开(公告)号：US10032819B2

    公开(公告)日：2018-07-24

    申请号：US14994230

    申请日：2016-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee ,  Minwook Jung

    IPC: H01L27/146 ,  H01L29/06

    Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

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