公开(公告)号：US20240339464A1

公开(公告)日：2024-10-10

申请号：US18744359

申请日：2024-06-14

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Raul Andres BIANCHI ,  Marios BARLAS ,  Alexandre LOPEZ ,  Bastien MAMDY ,  Bruce RAE ,  Isobel NICHOLSON

IPC: H01L27/146 ,  G02B5/18

CPC classification number: H01L27/14605 ,  H01L27/1462 ,  G02B5/18 ,  G02B5/1814 ,  G02B5/1819 ,  G02B5/1828 ,  G02B5/1842 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

公开(公告)号：US12068337B2

公开(公告)日：2024-08-20

申请号：US18144969

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae Kim ,  Jin-gyun Kim ,  Soo-jin Hong

IPC: H01L27/146 ,  H04N25/40

CPC classification number: H01L27/14605 ,  H04N25/40

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

公开(公告)号：US20240250098A1

公开(公告)日：2024-07-25

申请号：US18321281

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Hsien Chung ,  Tzu-Jui Wang ,  Chia-Chi Hsiao ,  Chun-Hao Chuang ,  Chen-Jong Wang ,  Dun-Nian Yaung

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: An integrated chip including a first semiconductor substrate. The first semiconductor substrate includes a doped region. A first photodetector and a second photodetector are in the first semiconductor substrate. A trench isolation layer at least partially surrounds the first photodetector and the second photodetector and extends between the first photodetector and the second photodetector. The trench isolation layer has a first pair of sidewalls. The first semiconductor substrate extends from the first photodetector, between the first pair of sidewalls, to the second photodetector. The doped region is between the first pair of sidewalls. The first photodetector and a first gate partially form a first transistor. The second photodetector and a second gate partially form a second transistor. A second semiconductor substrate is over the first gate and the second gate. A third transistor is along the second semiconductor substrate. The third transistor is coupled to the first transistor.

公开(公告)号：US12015037B2

公开(公告)日：2024-06-18

申请号：US17044994

申请日：2019-01-17

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yusuke Moriya

IPC: H01L27/146 ,  G02B5/20

CPC classification number: H01L27/14605 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: To prevent the occurrence of a defect in an infrared-light attenuation filter and prevent a reduction in image quality. An imaging device includes a photoelectric converter, an on-chip lens, a color filter, the infrared-light attenuation filter, and a protective film. The photoelectric converter performs photoelectric conversion depending on incident light. The on-chip lens collects the incident light into the photoelectric converter. Infrared light and visible light of a specified wavelength from among the collected incident light are transmitted through the color filter. The infrared-light attenuation filter attenuates the infrared light from among the collected incident light, and visible light from among the collected incident light is transmitted through the infrared-light attenuation filter. The protective film is arranged adjacent to the infrared-light attenuation filter and protects the infrared-light attenuation filter.

公开(公告)号：US12010448B2

公开(公告)日：2024-06-11

申请号：US17277487

申请日：2019-09-27

Applicant: Sony Interactive Entertainment Inc.

Inventor： Hiromasa Naganuma

IPC: H04N25/76 ,  G01J1/44 ,  H01L27/146

CPC classification number: H04N25/76 ,  G01J1/44 ,  H01L27/14605

Abstract: Provided are a sensor module including an event-driven vision sensor that includes a sensor array having a sensor that generates an event signal when the sensor detects a change in intensity of incident light, and an actuator connected to the sensor array and configured to displace the sensor array in a predetermined direction, and an electronic device having such a sensor module.

公开(公告)号：US12009374B2

公开(公告)日：2024-06-11

申请号：US18216170

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Sung Joe ,  Min Kyung Kim ,  Min Kwan Kim ,  Ji Su Kim ,  Tae Hoon Kim

IPC: H01L27/146 ,  H04N25/13 ,  H04N25/704

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N25/13 ,  H04N25/704

Abstract: An image sensor a substrate comprising a first surface and a second surface opposite to the first surface; a first pixel region; a second pixel region; a third pixel region; a first lens on the first pixel region; a second lens on the second and third pixel regions; an element separation film provided in the substrate and interposed between the first pixel region the second pixel region; a first color filter configured to transmit light focused by the second lens to the second pixel region and the third pixel region; and a color filter grid forming a region in which the first color filter is provided. A width of the first pixel region in a first direction is between 0.5 um and 0.9 um. The first lens is disposed on the second surface. The first direction is parallel to the second surface.

公开(公告)号：US11996428B2

公开(公告)日：2024-05-28

申请号：US17191393

申请日：2021-03-03

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Feng-Chien Hsieh ,  Yun-Wei Cheng ,  Kuo-Cheng Lee ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/14605 ,  H01L27/14627

Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.

公开(公告)号：US20240170508A1

公开(公告)日：2024-05-23

申请号：US18427963

申请日：2024-01-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Seiji Takahashi

IPC: H01L27/146 ,  H04N25/75

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H04N25/75

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip include a first photodetector in a semiconductor substrate. A first gate electrode overlies the semiconductor substrate and comprises a first sidewall over the first photodetector. A first source/drain region and a second source/drain region are in the semiconductor substrate and adjacent to the first sidewall. A first isolation element is in the semiconductor substrate and adjacent to the first sidewall. The first isolation element is spaced between the first and second source/drain regions.

公开(公告)号：US11991438B2

公开(公告)日：2024-05-21

申请号：US17626566

申请日：2020-07-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi Yoneda ,  Yusuke Negoro

IPC: H04N23/63 ,  H01L27/146

CPC classification number: H04N23/631 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14616

Abstract: An imaging device capable of executing image processing is provided. An imaging device with low power consumption is provided. A highly reliable imaging device is provided. An imaging device with higher integration degree of pixels is provided. An imaging device manufactured at low cost is provided. The imaging device includes a photoelectric conversion device, a first transistor that is formed in a first layer and includes silicon in a channel formation layer, and a capacitor that is formed in a second layer bonded to the first layer. One of a source and a drain of the first transistor is electrically connected to one of electrodes of the photoelectric conversion device, and the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor. A pixel having a function of generating first data and a function of multiplying the first data to have a given magnification to generate second data is included. The first data and the second data each have an analog value.

公开(公告)号：US11984465B2

公开(公告)日：2024-05-14

申请号：US17883660

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N25/702 ,  H04N25/704 ,  H04N25/76

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/702 ,  H04N25/704 ,  H04N25/76 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14687

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.