公开(公告)号：US20120161200A1

公开(公告)日：2012-06-28

申请号：US13332404

申请日：2011-12-21

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/87 ,  H01L21/329

CPC classification number: H01L29/87 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/66121 ,  H01L29/66386 ,  H01L29/747

Abstract: A mesa-type bidirectional vertical power component, including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; first regions of the first conductivity type in each of the layers of the second conductivity type; and, at the periphery of each of its surfaces, two successive grooves, the internal groove crossing the layers of the second conductivity type, second doped regions of the first conductivity type being formed under the surface of the external grooves and having the same doping profile as the first regions.

Abstract translation: 一种台面型双向垂直功率元件，包括第一导电类型的衬底; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的第一区域; 并且在其每个表面的周边处，两个连续的凹槽，与第二导电类型的层交叉的内部沟槽，第一导电类型的第二掺杂区域形成在外部沟槽的表面下方并且具有相同的掺杂分布 作为第一个地区。

公开(公告)号：US20120146089A1

公开(公告)日：2012-06-14

申请号：US13313174

申请日：2011-12-07

Applicant: Samuel Menard ,  Dalaf Ali

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/74

Abstract: A vertical four-quadrant triac wherein the gate region, arranged on the side of a front surface, includes a U-shaped region of a first conductivity type, the base of the U lying against one side of the structure, the main front surface region of the second conductivity type extending in front of the gate region and being surrounded with portions of the main front surface region of the first conductivity type.

Abstract translation: 垂直四象限三端双向可控硅开关元件，其中配置在前表面一侧的栅极区域包括第一导电类型的U形区域，U形底部位于该结构的一侧，主正面区域 所述第二导电类型在所述栅极区域的前面延伸并且被所述第一导电类型的所述主前表面区域的部分包围。

公开(公告)号：US07262442B2

公开(公告)日：2007-08-28

申请号：US11013972

申请日：2004-12-16

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/74

CPC classification number: H01L29/7428 ,  H01L29/747

Abstract: A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected to a control terminal and the second portion being connected with said region to the main front surface terminal.

Abstract translation: 三端双向可控硅开关元件包括在其前表面侧具有第一导电类型的自主启动阱，其包含第二导电类型的区域，其布置成在顶视图中将其分为第一和第二阱部分，第一部分连接到 控制端子和第二部分与所述区域连接到主正面端子。

公开(公告)号：US20060125055A1

公开(公告)日：2006-06-15

申请号：US11304247

申请日：2005-12-15

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/167

CPC classification number: H01L29/747 ,  H01L29/7404

Abstract: A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.

Abstract translation: 由轻掺杂的N型半导体衬底形成的相对于开关的背面参照的电压控制的垂直双向单片开关，其中控制结构在前表面侧包括第一P 型，其中形成N型区域，第二P型阱形成有MOS晶体管，第一P型阱和MOS晶体管的栅极连接到控制端子，所述N 型区域连接到MOS晶体管的主端子，并且MOS晶体管的第二主端子连接到开关的背面电压。

公开(公告)号：US06914271B2

公开(公告)日：2005-07-05

申请号：US10744412

申请日：2003-12-23

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L29/747

Abstract: A bidirectional switch for switching an A.C. voltage at a load, including a monolithic component, formed in an N-type substrate, including a first vertical thyristor; a second vertical thyristor; a P-type triggering region formed opposite to the cathode of the first thyristor and an N-type triggering region formed in the P-type triggering region, the P-type triggering region being intended to receive a control signal in a negative halfwave of the A.C. voltage to trigger the first thyristor; a resistive element connected to the P-type triggering region and to the anode of the first thyristor; and a capacitor having a terminal connected to the N-type triggering region and its other terminal intended to be connected to the reference voltage.

Abstract translation: 一种双向开关，用于在包括第一垂直晶闸管的N型衬底中形成的负载（包括单片组件）上切换交流电压; 第二个垂直晶闸管; 与第一晶闸管的阴极相反形成的P型触发区域和形成在P型触发区域中的N型触发区域，P型触发区域旨在接收位于该P型触发区域的负半波长的控制信号 交流电压触发第一个晶闸管; 连接到P型触发区和第一晶闸管的阳极的电阻元件; 以及具有与N型触发区域连接的端子的电容器，其另一端子用于连接到基准电压。

公开(公告)号：US09231092B2

公开(公告)日：2016-01-05

申请号：US13643967

申请日：2011-04-22

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747

CPC classification number: H01L29/747

Abstract: A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode and a gate electrode, this switch being controllable by a positive voltage between its gate and its first electrode, wherein the gate electrode is arranged on the front surface of a via crossing the chip in which the switch is formed.

Abstract translation: 一种垂直双向开关，其控制参照后表面，其后表面上包括第一主电极，在其前表面上包括第二主电极和栅电极，该开关由其栅极之间的正电压控制 及其第一电极，其中，栅电极配置在穿过其中形成有开关的芯片的通孔的前表面上。

公开(公告)号：US08698227B2

公开(公告)日：2014-04-15

申请号：US13332395

申请日：2011-12-21

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/788

CPC classification number: H01L29/0638 ,  H01L21/70 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/0661 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.

Abstract translation: 台面型双向Shockley二极管在其两个表面上由填充有玻璃化的外围槽限定，包括第一导电类型的衬底; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个区域下的第一导电类型的掩埋区域，在基板和第二导电类型的相应层之间的界面处，每个掩埋区域与另一个的突出互补; 以及在每个玻璃化的外围的外周环上，具有与掩埋区相同的掺杂分布。

公开(公告)号：US20120267679A1

公开(公告)日：2012-10-25

申请号：US13448670

申请日：2012-04-17

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/87 ,  H01L29/02

CPC classification number: H01L29/0626 ,  H01L27/0262 ,  H01L29/165 ,  H01L29/87

Abstract: A structure for starting a semiconductor component including a porous silicon layer in the upper surface of a semiconductor substrate. This porous silicon layer is contacted, on its upper surface side, by a metallization and, on its lower surface side, by a heavily-doped semiconductor region.

Abstract translation: 一种用于在半导体衬底的上表面中起始包括多孔硅层的半导体组件的结构。 该多孔硅层在其上表面侧通过金属化和在其下表面侧上被重掺杂的半导体区域接触。

公开(公告)号：US20120161199A1

公开(公告)日：2012-06-28

申请号：US13332395

申请日：2011-12-21

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/87

CPC classification number: H01L29/0638 ,  H01L21/70 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/0661 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.

Abstract translation: 台面型双向Shockley二极管在其两个表面上由填充有玻璃化的外围槽限定，包括第一导电类型的衬底; 在基板的每一侧上具有第二导电类型的层; 第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个区域下的第一导电类型的掩埋区域，在基板和第二导电类型的相应层之间的界面处，每个掩埋区域与另一个的突出互补; 以及在每个玻璃化的外围的外周环上，具有与掩埋区相同的掺杂分布。

公开(公告)号：US20120012891A1

公开(公告)日：2012-01-19

申请号：US13242626

申请日：2011-09-23

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/7404

Abstract: A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.

Abstract translation: 由轻掺杂的N型半导体衬底形成的相对于开关的背面参照的电压控制的垂直双向单片开关，其中控制结构在前表面侧包括第一P 型，其中形成N型区域，第二P型阱形成有MOS晶体管，第一P型阱和MOS晶体管的栅极连接到控制端子，所述N 型区域连接到MOS晶体管的主端子，并且MOS晶体管的第二主端子连接到开关的背面电压。