公开(公告)号：US08785970B2

公开(公告)日：2014-07-22

申请号：US13104254

申请日：2011-05-10

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/66

CPC classification number: H01L29/747 ,  H01L29/1012 ,  H01L29/66386 ,  H01L29/872

Abstract: A bidirectional switch controllable by a voltage between its gate and rear electrode and including an N-type semiconductor substrate surrounded with a P-type well; on the front surface side, a P-type well in which is formed a first N-type region; on the rear surface side, a P-type layer in which is formed a second N-type region. The well is doped to less than 1016 at./cm3, the exposed surfaces of this well being heavily P-type doped. At least a third P-type region, of same doping level as the well, is formed on the front surface side in the substrate, and contains at least a fourth N-type region of a doping level lower than 1017 at./cm3, on which is formed a Schottky contact.

Abstract translation: 双向开关，其栅极和后电极之间的电压可控，并且包括用P型阱包围的N型半导体衬底; 在前表面侧形成有P型阱，其中形成有第一N型区域; 在后表面侧形成有形成第二N型区域的P型层。 该阱被掺杂到小于1016at./cm3，该阱的暴露表面是重P型掺杂的。 至少在衬底的前表面侧形成与阱相同的掺杂水平的第三P型区域，并且至少含有低于1017at./cm3的掺杂水平的第四N型区域， 其上形成肖特基接触。

公开(公告)号：US08704270B2

公开(公告)日：2014-04-22

申请号：US13210830

申请日：2011-08-16

Applicant: Samuel Menard ,  Yannick Hague

Inventor： Samuel Menard ,  Yannick Hague

IPC: H01L29/66

CPC classification number: H01L29/66121 ,  H01L23/62 ,  H01L29/87 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.

Abstract translation: 一种Shockley二极管，包括：在第一和第二电极之间的交替导电类型的第一至第四层的垂直堆叠; 形成在第四层中并垂直延伸以渗入第二层的凹陷; 与第二层相同的导电类型的第一区域，但具有较大的掺杂水平的第一区域，在第二层的凹槽的底部延伸; 以及与所述第三层相同的导电类型的第二区域，但具有较大的掺杂水平，沿所述凹槽的侧壁延伸并将所述第一区域连接到所述第四层。

公开(公告)号：US20130049065A1

公开(公告)日：2013-02-28

申请号：US13643967

申请日：2011-04-22

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747

CPC classification number: H01L29/747

Abstract: A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode and a gate electrode, this switch being controllable by a positive voltage between its gate and its first electrode, wherein the gate electrode is arranged on the front surface of a via crossing the chip in which the switch is formed.

Abstract translation: 一种垂直双向开关，其控制参照后表面，其后表面上包括第一主电极，在其前表面上包括第二主电极和栅电极，该开关由其栅极之间的正电压控制 及其第一电极，其中，栅电极配置在穿过其中形成有开关的芯片的通孔的前表面上。

公开(公告)号：US20120161198A1

公开(公告)日：2012-06-28

申请号：US13326686

申请日：2011-12-15

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/87

CPC classification number: H01L29/0661 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

Abstract: A mesa-type bidirectional Shockley diode including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of said regions of the first conductivity type, each buried region being complementary in projection with the other; and a groove arranged in the vicinity of the periphery of the component on each of its surfaces, the component portion external to the groove comprising, under the external portion of the upper and lower regions of the second conductivity type, regions of the first conductivity type of same doping profile as said buried regions.

Abstract translation: 包括第一导电类型的衬底的台面型双向Shockley二极管; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个所述区域的每一个下的第一导电类型的掩埋区域，每个掩埋区域与另一个的突出互补; 以及在其每个表面上在所述部件的周边附近布置的槽，所述槽外部的所述部件部分包括在所述第二导电类型的上部和下部区域的外部部分处的所述第一导电类型的区域 与所述掩埋区域具有相同的掺杂特性。

公开(公告)号：US20120061719A1

公开(公告)日：2012-03-15

申请号：US13210830

申请日：2011-08-16

Applicant: Samuel Menard ,  Yannick Hague

Inventor： Samuel Menard ,  Yannick Hague

IPC: H01L29/87 ,  H01L21/332

CPC classification number: H01L29/66121 ,  H01L23/62 ,  H01L29/87 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.

Abstract translation: 一种Shockley二极管，包括：在第一和第二电极之间的交替导电类型的第一至第四层的垂直堆叠; 形成在第四层中并垂直延伸以渗入第二层的凹陷; 与第二层相同的导电类型的第一区域，但具有较大的掺杂水平的第一区域，在第二层的凹槽的底部延伸; 以及与所述第三层相同的导电类型的第二区域，但具有较大的掺杂水平，沿所述凹槽的侧壁延伸并将所述第一区域连接到所述第四层。

公开(公告)号：US20070138502A1

公开(公告)日：2007-06-21

申请号：US11639754

申请日：2006-12-15

Applicant: Christophe Mauriac ,  Samuel Menard

Inventor： Christophe Mauriac ,  Samuel Menard

IPC: H01L29/74

CPC classification number: H01L29/47 ,  H01L29/7412 ,  H01L29/7428

Abstract: A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.

Abstract translation: 适用于HF控制器的垂直晶闸管，包括P型基极阱中的阴极区域，靠近基极阱的轻掺杂P型层，轻掺杂P型层中的轻掺杂N型区， 类型层，连接到控制端子的轻掺杂N型区域上的肖特基接触，以及轻掺杂N型区域和P型基极阱之间的连接。

公开(公告)号：US20050082565A1

公开(公告)日：2005-04-21

申请号：US10963383

申请日：2004-10-12

Applicant: Samuel Menard ,  Christophe Mauriac

Inventor： Samuel Menard ,  Christophe Mauriac

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/74 ,  H03K17/722 ,  H01L31/062

CPC classification number: H01L29/42308 ,  H01L29/41716 ,  H01L29/7408 ,  H03K17/722

Abstract: A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.

Abstract translation: 垂直SCR开关由具有至少四个主交替层的高频信号控制。 该开关包括通过集成电容器连接到相应区域的栅极端子和栅极参考端子。 在晶闸管的情况下，在其正面侧具有形成在N型栅极半导体区域中的主P型半导体区域，主区域的第一部分连接到主区域之一，第二部分 主区域经由第一集成电容器连接到控制端子之一，并且栅极区域的一部分经由第二集成电容器连接到另一个控制端子。

公开(公告)号：US08686515B2

公开(公告)日：2014-04-01

申请号：US13332404

申请日：2011-12-21

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/87 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/66121 ,  H01L29/66386 ,  H01L29/747

Abstract: A mesa-type bidirectional vertical power component, including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; first regions of the first conductivity type in each of the layers of the second conductivity type; and, at the periphery of each of its surfaces, two successive grooves, the internal groove crossing the layers of the second conductivity type, second doped regions of the first conductivity type being formed under the surface of the external grooves and having the same doping profile as the first regions.

Abstract translation: 一种台面型双向垂直功率元件，包括第一导电类型的衬底; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的第一区域; 并且在其每个表面的周边处，两个连续的凹槽，与第二导电类型的层交叉的内部沟槽，第一导电类型的第二掺杂区域形成在外部沟槽的表面下方并且具有相同的掺杂分布 作为第一个地区。

公开(公告)号：US08564059B2

公开(公告)日：2013-10-22

申请号：US13037694

申请日：2011-03-01

Applicant: Samuel Menard ,  François Ihuel

Inventor： Samuel Menard ,  François Ihuel

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC classification number: H01L29/747 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/0834

Abstract: A high-voltage vertical power component including a lightly-doped semiconductor substrate of a first conductivity type and, on the side of an upper surface, an upper semiconductor layer of the second conductivity type which does not extend all the way to the component periphery, wherein the component periphery includes, on the lower surface side, a ring-shaped diffused region of the second conductivity type extending across from one third to half of the component thickness; and on the upper surface side, an insulated ring-shaped groove crossing the substrate to penetrate into an upper portion of ring-shaped region.

Abstract translation: 一种高电压垂直功率分量，包括第一导电类型的轻掺杂半导体衬底，并且在上表面侧，不延伸到组件周边的第二导电类型的上半导体层， 其中所述部件周边在所述下表面侧包括跨越所述部件厚度的三分之一到一半的所述第二导电类型的环形扩散区域; 并且在上表面侧具有与基板交叉的绝缘环状槽，以穿透到环形区域的上部。

公开(公告)号：US08552467B2

公开(公告)日：2013-10-08

申请号：US13313174

申请日：2011-12-07

Applicant: Samuel Menard ,  Dalaf Ali

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L29/66

CPC classification number: H01L29/747 ,  H01L29/74

Abstract: A vertical four-quadrant triac wherein the gate region, arranged on the side of a front surface, includes a U-shaped region of a first conductivity type, the base of the U lying against one side of the structure, the main front surface region of the second conductivity type extending in front of the gate region and being surrounded with portions of the main front surface region of the first conductivity type.

Abstract translation: 垂直四象限三端双向可控硅开关元件，其中配置在前表面一侧的栅极区域包括第一导电类型的U形区域，U形底部位于该结构的一侧，主正面区域 所述第二导电类型在所述栅极区域的前面延伸并且被所述第一导电类型的所述主前表面区域的部分包围。