公开(公告)号：US20230137938A1

公开(公告)日：2023-05-04

申请号：US17862428

申请日：2022-07-12

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F3/06

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first migrate command, for migrating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; writing the first data at the first destination logical address; and controlling the memory device to make the first data at the first source logical address become invalid data.

公开(公告)号：US20230133559A1

公开(公告)日：2023-05-04

申请号：US17864449

申请日：2022-07-14

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F3/06

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first duplicate command, for duplicating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; and writing the first data at the first destination logical address.

公开(公告)号：US20220300184A1

公开(公告)日：2022-09-22

申请号：US17206147

申请日：2021-03-19

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F3/06 ,  G11C16/16 ,  G11C16/34

Abstract: A method of performing a wear-leveling operation in a flash memory includes: determining a block age for each of a plurality of blocks in the flash memory according to a number of erase operations that have been performed on the flash memory after the block is erased; selecting one or more candidate source blocks from the plurality of blocks by comparing block ages of the plurality of blocks with an age limit; determining a source block from the one or more candidate source blocks according to erase counts or block ages of the one or more candidate source blocks; and performing the wear-leveling operation on the source block.

公开(公告)号：US20250077343A1

公开(公告)日：2025-03-06

申请号：US18731341

申请日：2024-06-02

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F11/10

Abstract: The present invention provides a method for controlling a flash memory module. The method includes the steps of: after the flash memory module is powered on, determining whether the flash memory module encountered an abnormal power failure before the flash memory module is powered on; if the flash memory module encounters the abnormal power failure before the flash memory module is powered on, determining a last super block written by the flash memory module before powering on, where the super block includes multiple first blocks; determining a last rewritten page of the super block; determining a check range of the super block according to the last written page of the super block; determining a data weak region of the super block by reading the pages of the check range; and moving data in the weak data region to other regions of the super block or to another super block.

公开(公告)号：US20240403207A1

公开(公告)日：2024-12-05

申请号：US18420803

申请日：2024-01-24

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F12/02

Abstract: The present invention provides a method for accessing a flash memory module, wherein the method includes the steps of: configuring the flash memory module to have a super block, wherein the super block comprises a plurality of blocks respectively located in a plurality of dies; encoding M data respectively to sequentially generate M temporary parities, wherein M is a positive integer greater than two; storing the M temporary parities into N areas of a buffer sequentially, wherein N is less than M, each of the N areas is only allowed to store one temporary parity, and a first part of the N areas is always used to store a portion temporary parities of the M temporary parities and their subsequent updated temporary parities; and generating M parities according to the M temporary parities, respectively, and writing the M parities into the super block.

公开(公告)号：US12141475B2

公开(公告)日：2024-11-12

申请号：US17743485

申请日：2022-05-13

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F3/06

Abstract: A method of a storage device to be externally coupled to a host device via a specific communication interface includes: providing a flash memory unit comprising at least one flash memory; counting an outstanding command number for at least one submission queue which is used for storing information of unfinished commands; counting a completion command number for at least one completion queue which is used for storing information of finished commands; and, generating and outputting an interrupt event from the storage device to the host device when a comparison result of the counted outstanding command number with the counted completion command number matches a specific condition.

公开(公告)号：US20240256465A1

公开(公告)日：2024-08-01

申请号：US18102779

申请日：2023-01-30

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F12/12 ,  G06F12/1009

CPC classification number: G06F12/12 ,  G06F12/1009

Abstract: A method of handling trim commands in a flash memory is provided. The method comprises: receiving a trim command; modifying logical-to-physical (L2P) address mapping entries of a L2P address mapping table according to the trim command; and storing trim information of the trim command into one of data blocks of the flash memory after modifying the L2P address mapping entries according to the trim command.

公开(公告)号：US11977783B2

公开(公告)日：2024-05-07

申请号：US17864449

申请日：2022-07-14

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0607 ,  G06F3/065 ,  G06F3/0679

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first duplicate command, for duplicating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; and writing the first data at the first destination logical address.

公开(公告)号：US20230025761A1

公开(公告)日：2023-01-26

申请号：US17955505

申请日：2022-09-28

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F12/02

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: setting a GC starting threshold, wherein the GC starting threshold indicates a predetermined spare block number that is higher than a target spare block number of spare blocks maintained by a flash translation layer (FTL) of the flash memory; determining whether to start the GC operation according to a current number of spare blocks in the flash memory and the GC starting threshold; and performing the GC operation on a source block in the flash memory when the current number of spare blocks is lower than or equal to the GC starting threshold.

公开(公告)号：US20220342811A1

公开(公告)日：2022-10-27

申请号：US17239669

申请日：2021-04-25

Applicant: Silicon Motion, Inc.

Inventor： Tzu-Yi Yang

IPC: G06F12/02 ,  G06F12/0882 ,  G06F12/0891 ,  G06F13/16

Abstract: A method of performing a garbage collection operation on a source block includes: performing a plurality of partial page clean operations during a series of host write operations. Each partial clean operation includes: performing a validity check process within a partitioned searching range of the source block to obtain valid page information; and performing a page clean process according to the valid page information and a target clean page number to read valid pages indicated by the valid page information.