公开(公告)号：US3971056A

公开(公告)日：1976-07-20

申请号：US550838

申请日：1975-02-18

申请人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman ,  Lawrence E. Van Horn

发明人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman ,  Lawrence E. Van Horn

IPC分类号： G01K7/01 ,  G05D23/20 ,  H01L29/66 ,  H03K17/94 ,  H01L23/56 ,  H01L29/74 ,  H02P1/44 ,  H03K3/35

CPC分类号： H01L29/66992 ,  G01K7/01 ,  G05D23/20 ,  H01L24/01 ,  H03K17/94 ,  H01L2924/16152

摘要： Germanium semiconductor temperature switches are described which are capable of intrinsically switching between high and low resistance states within a temperature range up to 55.degree.C, and are adapted for operating at voltages up to 400 volts. These temperature switches are disclosed in various configurations. Basic circuits for adjusting the temperatures at which such switches switch within a range are disclosed. Preferred methods of making the same are also disclosed.

摘要翻译： 描述了锗半导体温度开关，其能够在高达55℃的温度范围内本质上在高电阻和低电阻状态之间切换，并且适于在高达400伏的电压下工作。 以各种结构公开了这些温度开关。 公开了用于调节这种开关在一定范围内切换的温度的基本电路。 还公开了制备其的优选方法。

公开(公告)号：US4119845A

公开(公告)日：1978-10-10

申请号：US779639

申请日：1977-03-21

申请人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten

发明人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten

IPC分类号： H01H37/00 ,  G02F1/13 ,  H03K17/082 ,  H03K17/78 ,  H03K17/79 ,  G01D5/34

CPC分类号： H03K17/79 ,  H03K17/0824

摘要： A switching system having a photo-sensitive power switching or control element such as a photo SCR, photo triac, photo transistor or the like that is normally turned on or off by coupled light from a controlled light source such as an LED (light emitting diode), neon lamp, incandescent lamp or the like. A thermally-sensitive light-gating element such as an LC (liquid crystal) element controls the light impinging on the photo-sensitive element. The gating element may sense the temperature of the photo-sensitive power switching or control element directly if the two are integral in which case the combined device would be self-protecting. On the other hand, the gating element may be separate and may be arranged to sense the temperature of an external source that may or may not be controlled by the photo-sensitive power switching or control element in which case the latter would be controlled by the temperature. Different types of temperature-sensitive gating elements or combinations thereof may be used in the systems.

摘要翻译： 具有通常通过来自受控光源（例如LED（发光二极管））的耦合光而导通或截止的光敏电力切换或控制元件的光敏电源开关或控制元件如光SCR，光电三端双向可控硅，光电晶体管等的开关系统 ），霓虹灯，白炽灯等。 诸如LC（液晶）元件的热敏门控元件控制照射在感光元件上的光。 门控元件可以直接感测光敏电力开关或控制元件的温度，如果两者是一体的，在这种情况下，组合器件将是自我保护的。 另一方面，门控元件可以是分开的并且可以被布置成感测外部源的温度，该外部源的温度可以由光敏电力开关或控制元件控制或者不受控制，在这种情况下，后者将由 温度。 可以在系统中使用不同类型的温度敏感门控元件或其组合。

公开(公告)号：US4571606A

公开(公告)日：1986-02-18

申请号：US390484

申请日：1982-06-21

申请人： James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten ,  Stanley V. Jaskolski

发明人： James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten ,  Stanley V. Jaskolski

IPC分类号： H01L27/102 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/0653 ,  H01L27/1024 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/7816

摘要： Lateral FET structure is disclosed with an insulative region such as porous silicon filled with oxide formed in the drift region to divert the drift region current path and increase the length thereof to afford higher OFF state blocking voltage without increasing lateral dimensions. Combinations involving bidirectional power switching structures are also disclosed, as well as a multicell matrix array.

摘要翻译： 公开了一种绝缘区域，例如填充有在漂移区域中形成的氧化物的多孔硅的绝缘区域，以使漂移区域电流路径转移并增加其长度以提供更高的截止状态阻挡电压而不增加横向尺寸。 还公开了涉及双向功率开关结构的组合，以及多单元矩阵阵列。