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    Radiant energy activated semiconductor switch
    2.
    发明授权
    Radiant energy activated semiconductor switch 失效
    辐射能激活半导体开关

    公开(公告)号：US4295058A

    公开(公告)日：1981-10-13

    申请号：US46568

    申请日：1979-06-07

    申请人： Robert W. Lade ,  Gordon B. Spellman ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  James R. Jaeschke

    发明人： Robert W. Lade ,  Gordon B. Spellman ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  James R. Jaeschke

    IPC分类号： H03K17/13 ,  H03K17/79 ,  H03K17/94 ,  H03K17/72 ,  H03K17/687

    CPC分类号： H03K17/79 ,  H03K17/136 ,  H03K17/941 ,  Y10S136/293 ,  Y10T307/773

    摘要： Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.

    摘要翻译： 公开了各种电路和辐射能响应传感器装置的组合，例如连接到源极和漏极连接到晶闸管的栅极和阴极的耗尽型FET的栅极的光伏二极管，以提供半导体开关，其被触发成导通 仅仅通过少量的辐射能量，而不需要第二触发能量源，并且还提供对不需要的dv / dt和温度引起的接通的抗扰性。 公开了各种操作模式，包括晶闸管自触发为导通，和/或具有光激活型本身，并且通过入射光直接触发和/或由光响应二极管偏压触发，和/ 或者由连接到晶闸管门的第二组光伏二极管提供的小偏压触发。 公开了提供零交叉点火的其它组合。

    Amplified gate thyristor with non-latching amplified control transistors across base layers
    3.
    发明授权
    Amplified gate thyristor with non-latching amplified control transistors across base layers 失效
    具有非锁存放大控制晶体管的放大栅极晶闸管跨基极层

    公开(公告)号：US4529998A

    公开(公告)日：1985-07-16

    申请号：US391803

    申请日：1982-06-24

    申请人： Robert W. Lade ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  Gordon B. Spellman

    发明人： Robert W. Lade ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  Gordon B. Spellman

    IPC分类号： H01L27/06 ,  H01L29/74

    CPC分类号： H01L29/7428 ,  H01L27/0694

    摘要： A diode is integrated on a common substrate with a thyristor to form a parasitic transistor in the gate circuit of the thyristor for amplifying gate current thereto. In addition, gate sensitivity is further enhanced by this formation because the injection efficiency across the thyristor anode-base junction is increased, thus reducing the amount of gate current necessary to trigger the thyristor. The diode cathode, diode anode and substrate form an emitter, base and collector, respectively, of the parasitic transistor. The junction formed by the substrate and the thyristor anode region is forward biased and supplies collector current for the parasitic transistor, this junction being inactive with respect to the junction formed by the substrate and the diode anode region. Thus gate current flowing through the diode to the gate of the thyristor is increased by the additional collector current afforded by the parasitic transistor. This parasitic transistor formation enables the use of a shorted-emitter thyristor while also achieving a high degree of gate sensitivity without the usual drawbacks of temperature and dv/dt sensitivity associated with a nonshorted-emitter high gate sensitivity thyristor.

    摘要翻译： 二极管集成在具有晶闸管的公共衬底上，以在晶闸管的栅极电路中形成用于放大栅极电流的寄生晶体管。 此外，由于这种形成进一步增强栅极灵敏度，因为跨越晶闸管阳极 - 基极结的注入效率增加，从而减少触发晶闸管所需的栅极电流量。 二极管阴极，二极管阳极和衬底分别形成寄生晶体管的发射极，基极和集电极。 由衬底和晶闸管阳极区形成的结正向偏置，并为寄生晶体管提供集电极电流，该结对于由衬底和二极管阳极区形成的结无效。 因此，通过由寄生晶体管提供的附加集电极电流，流过二极管的栅极电流增加到晶闸管的栅极。 这种寄生晶体管形成使得能够使用短路发射极晶闸管，同时也实现高度的栅极灵敏度，而没有与非发射极高栅极灵敏度晶闸管相关的温度和dv / dt灵敏度的常见缺点。

    Thermally protected semiconductor with accurate phase control
    4.
    发明授权
    Thermally protected semiconductor with accurate phase control 失效
    具有精确相位控制的热保护半导体

    公开(公告)号：US4458287A

    公开(公告)日：1984-07-03

    申请号：US421940

    申请日：1982-09-23

    申请人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman

    发明人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman

    IPC分类号： H03K17/08 ,  H03K17/082 ,  H02H5/04

    CPC分类号： H03K17/0824 ,  H03K2017/0806

    摘要： A power thyristor is provided with a pair of antiseries back to back diode junctions forming an open base transistor thermally coupled to the thyristor and electrically connected between the thyristor gate and cathode. The diode junctions shunt gate current above a given sensed temperature of the power thyristor, for protecting the latter by preventing turn-on thereof. The diode junctions have nonsymmetrical leakage current characteristics to insure protective shunting of forward gate drive in one direction but blocking leakage in the other direction to prevent draining a reverse charged phasing capacitor. The latter is thus charged beginning from the same starting reference point in each cycle whereby to insure accurate phase control in an AC gating system.

    摘要翻译： 功率晶闸管具有一对反电容背对背二极管结，形成热耦合到晶闸管的开放式基极晶体管，并电连接在晶闸管栅极和阴极之间。 二极管将电流闸流电流分流到功率晶闸管的给定感测温度以上，以防止其接通。 二极管接头具有非对称的漏电流特性，以确保正向栅极驱动在一个方向上的保护分流，但阻止另一个方向的泄漏，以防止排出反向充电相控电容器。 因此，后者在每个循环中从相同的起始参考点开始充电，从而确保AC选通系统中的精确相位控制。

    Thyristor having widened region of temperature sensitivity with respect to breakover voltage
    5.
    发明授权
    Thyristor having widened region of temperature sensitivity with respect to breakover voltage 失效
    晶闸管相对于转折电压具有加宽的温度敏感区域

    公开(公告)号：US4323793A

    公开(公告)日：1982-04-06

    申请号：US94074

    申请日：1979-11-14

    申请人： Herman P. Schutten ,  Stanley V. Jaskolski ,  Gordon B. Spellman ,  Robert W. Lade ,  Michael J. Schutten

    发明人： Herman P. Schutten ,  Stanley V. Jaskolski ,  Gordon B. Spellman ,  Robert W. Lade ,  Michael J. Schutten

    IPC分类号： H03K17/72

    CPC分类号： H03K17/72

    摘要： An external resistance is presented between the gate and cathode of a thermally sensitive thyristor which varies in accordance with a changing voltage applied across the thyristor. The changing voltage sweeps the varying external resistance through its operating range which in turn expands the region of temperature sensitivity with respect to breakover voltage by sweeping the shifting curves of switching temperature vs. gate to cathode resistance for the thyristor. In preferred form, a field effect transistor (FET) (10) is connected between the gate (8) and cathode (4) of the thermally sensitive thyristor (6) and is biased by the same voltage supply applied across the thyristor. The FET presents an external gate to cathode resistance which varies in accordance with the changing bias level on the FET, which is the same changing bias applied across the thyristor. The range of variance of this added external resistance must be between 10,000 ohms and 1 megohm. The breakover voltage of the thyristor can be made to vary slowly with respect to temperature, rather than exhibiting sharp drop in a narrow critical temperature region.

    摘要翻译： 在热敏晶闸管的栅极和阴极之间呈现外部电阻，其根据施加在晶闸管上的变化的电压而变化。 变化的电压通过其工作范围扫描变化的外部电阻，通过扫描晶闸管的开关温度与栅极至阴极电阻的移位曲线，从而扩展相对于分解电压的温度灵敏度区域。 在优选形式中，场效应晶体管（FET）（10）连接在热敏晶闸管（6）的栅极（8）和阴极（4）之间，并被施加在晶闸管两端的相同电源施加偏压。 FET呈现外部栅极至阴极电阻，其根据FET上改变的偏置电平而变化，这是跨晶闸管施加的相同的变化偏置。 该外加电阻的方差范围必须在10,000欧姆和1兆欧之间。 可以使晶闸管的转折电压相对于温度变化缓慢，而不是在窄的临界温度区域显示出急剧的下降。

    Temperature sensitive relaxation oscillator
    6.
    发明授权
    Temperature sensitive relaxation oscillator 失效
    温度敏感放大振荡器

    公开(公告)号：US4185253A

    公开(公告)日：1980-01-22

    申请号：US946178

    申请日：1978-09-27

    申请人： Robert W. Lade ,  Stanley V. Jaskolski ,  Gordon B. Spellman ,  Herman P. Schutten

    发明人： Robert W. Lade ,  Stanley V. Jaskolski ,  Gordon B. Spellman ,  Herman P. Schutten

    IPC分类号： G01K7/00 ,  G01K3/00 ,  G01K7/01 ,  H01L29/74 ,  H03K3/352 ,  H03K3/35

    CPC分类号： G01K3/005 ,  G01K7/01 ,  H03K3/352

    摘要： A temperature sensitive thyristor is incorporated in a relaxation oscillator to provide active temperature sensing. As temperature decreases, the breakover voltage V.sub.BO of the thyristor increases, and when V.sub.BO becomes greater than the supply voltage, oscillations will cease, thus providing a low temperature alarm point. As temperature increases, V.sub.BO decreases and the amplitude of oscillation diminishes, thus providing a high temperature alarm point. This is a "fail-safe" arrangement because component failure also provides a warning condition (absence of oscillation). Frequency of oscillation may also be sensed as an indication of temperature.

    摘要翻译： 温度敏感晶闸管被并入松弛振荡器中以提供有源温度感测。 随着温度的降低，晶闸管的跳变电压VBO增加，当VBO变得大于电源电压时，振荡将停止，从而提供低温报警点。 随着温度升高，VBO减小，振荡幅度减小，从而提供高温报警点。 这是一个“故障安全”的安排，因为组件故障也提供了一个警告条件（没有振荡）。 振动频率也可以被感测为温度的指示。

    Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version
    7.
    发明授权
    Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version 失效
    集成的热敏电力开关半导体器件，包括热自我保护型

    公开(公告)号：US4050083A

    公开(公告)日：1977-09-20

    申请号：US725626

    申请日：1976-09-22

    申请人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman

    发明人： Stanley V. Jaskolski ,  Robert W. Lade ,  Herman P. Schutten ,  Gordon B. Spellman

    IPC分类号： H01L23/58 ,  H01L27/02 ,  H01L27/06 ,  H01L27/08 ,  H01L29/66 ,  H01L29/74 ,  H01L35/00 ,  H01L23/56 ,  H01L29/747

    CPC分类号： H01L29/66992 ,  H01L27/0211 ,  H01L27/0248 ,  H01L27/0688 ,  H01L27/0817 ,  H01L2924/0002

    摘要： A monolithic semiconductor device is disclosed comprising a power switching thyristor and a temperature sensitive thyristor integrated on a common substrate. In preferred form, the temperature sensitive thyristor is electrically connected between the gate terminal and one of the main terminals of the power switching thyristor, and is thermally actuatable to intrinsically switch from a high to a low resistance state above a predetermined temperature of the power switching thyristor sensed through the common substrate, whereby to shunt gate current and automatically inhibit turn-on of the power switching thyristor to prevent overheating thereof. Depending on circuit variations, the power switching thyristor may be rendered conductive above or below a predetermined temperature, or within a defined temperature range. Normally off and normally on devices are disclosed.

    摘要翻译： 公开了一种单片半导体器件，其包括集成在公共衬底上的功率开关晶闸管和温度敏感晶闸管。 在优选形式中，温度敏感晶闸管电连接在电源开关晶闸管的栅极端子和主端子之一之间，并且是可热致动的，以便在功率切换的预定温度之上从高电平到低电阻状态本质地切换 通过公共衬底感测晶闸管，从而分流栅极电流并自动禁止功率开关晶闸管的导通以防止其过热。 根据电路变化，功率开关晶闸管可以导通到高于或低于预定温度或在限定的温度范围内。 通常关闭和正常的器件被公开。

    Transducer combining comparator or converter function with sensor function
    10.
    发明授权
    Transducer combining comparator or converter function with sensor function 失效
    传感器组合比较器或转换器功能与传感器功能

    公开(公告)号：US4206646A

    公开(公告)日：1980-06-10

    申请号：US946179

    申请日：1978-09-27

    申请人： Gordon B. Spellman ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  Robert W. Lade

    发明人： Gordon B. Spellman ,  Stanley V. Jaskolski ,  Herman P. Schutten ,  Robert W. Lade

    IPC分类号： G01D5/246 ,  G01K7/01 ,  G01K7/00

    CPC分类号： G01D5/246 ,  G01K7/01

    摘要： A transducer is disclosed which provides a digital indication of a sensed analog condition without the need of an analog to digital (A/D) converter or a comparator. A condition responsive element having a true abrupt switching characteristic at a known breakover voltage as a function of a condition being sensed is biased by a voltage source preferably supplying a periodic voltage as a known function of time. The point during the voltage source cycle at which the condition responsive element switches to its other state is determined by the sensed condition. Preferably, a clock of known frequency is enabled when the condition responsive element is in one of its states, whereby clock pulses are counted during an interval whose duration is determined by the sensed condition. The number of clock pulses counted is a digital value of the analog condition being sensed because: (i) the clock frequency is known; (ii) the voltage/time relation of the voltage source is known; and (iii) the voltage/sensed condition relation of the condition responsive element is known. A thermally sensitive thyristor is specifically disclosed for the condition responsive element.

    摘要翻译： 公开了一种传感器，其提供感测模拟状态的数字指示，而不需要模数（A / D）转换器或比较器。 具有作为感测条件的函数的已知的断开电压具有真正的突变切换特性的条件响应元件被优选地提供作为已知时间功能的周期性电压的电压源偏置。 在状态响应元件切换到其它状态的电压源周期期间的点由感测到的条件确定。 优选地，当条件响应元件处于其状态之一时，已知频率的时钟被使能，从而在其持续时间由感测到的条件确定的间隔期间对时钟脉冲进行计数。 计数的时钟脉冲的数量是由于（i）时钟频率已知的，感测的模拟条件的数字值; （ii）电压源的电压/时间关系是已知的; 以及（iii）条件响应元件的电压/感测条件关系是已知的。 专门针对条件响应元件公开了一种热敏晶闸管。