公开(公告)号：US20200013554A1

公开(公告)日：2020-01-09

申请号：US16483516

申请日：2018-02-13

Applicant: TDK Corporation

Inventor： Koichi TSUNODA ,  Mitsuhiro TOMIKAWA ,  Kazuhiro YOSHIKAWA ,  Kenichi YOSHIDA

IPC: H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H01G4/252

Abstract: In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

公开(公告)号：US20190279823A1

公开(公告)日：2019-09-12

申请号：US16294139

申请日：2019-03-06

Applicant: TDK Corporation

Inventor： Michihiro KUMAGAE ,  Kazuhiro YOSHIKAWA ,  Kenichi YOSHIDA ,  Junki NAKAMOTO ,  Norihiko MATSUZAKA

IPC: H01G4/30 ,  H01G4/33 ,  H01G4/012

Abstract: Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.