公开(公告)号：US09882041B1

公开(公告)日：2018-01-30

申请号：US15353857

申请日：2016-11-17

Applicant: Texas Instruments Incorporated

Inventor： Jungwoo Joh ,  Naveen Tipirneni ,  Chang Soo Suh ,  Sameer Pendharkar

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266 ,  H01L21/308

CPC classification number: H01L29/7786 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/3083 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/66462

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.