公开(公告)号：US20220231115A1

公开(公告)日：2022-07-21

申请号：US17152230

申请日：2021-01-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey Alan West ,  Byron Lovell Williams ,  Elizabeth Costner Stewart ,  Thomas Dyer Bonifeld

IPC: H01L49/02 ,  H01L23/552

Abstract: Described examples include a hybrid circuit having a component. The component has a first conductive element on a substrate having a configuration and having a first periphery and having an extension at the first periphery. The component also has a dielectric on the first conductive element. The component also has a second conductive element having the configuration on the dielectric that is proximate to and aligned with the first conductive element, and has a second periphery, the extension of the first conductive element extending past the second periphery.

公开(公告)号：US11121224B2

公开(公告)日：2021-09-14

申请号：US16270729

申请日：2019-02-08

Applicant: Texas Instruments Incorporated

Inventor： Ming-Yeh Chuang ,  Elizabeth Costner Stewart

IPC: H01L29/40 ,  H01L29/78 ,  H01L21/308 ,  H01L29/66 ,  H01L29/06

Abstract: An integrated circuit (IC) includes a field-plated transistor including a substrate having a semiconductor surface layer, at least one body region in the semiconductor surface layer, and at least a first trench isolation region adjacent to the body region having at least a first tapered sidewall that has an average angle along its full length of 15 to 70 degrees. A gate is over the body region. A field plate is over the first tapered trench isolation region. A source is on one side of the field plate and a drain is on an opposite side of the field plate. The IC also includes circuitry for realizing at least one circuit function having a plurality of transistors which are configured together with the field-plated transistor that utilize second trench isolation regions for isolation that have an average angle of 75 and 90 degrees.