公开(公告)号：US20150249025A1

公开(公告)日：2015-09-03

申请号：US14468524

申请日：2014-08-26

申请人： TOYO TANSO CO., LTD.

发明人： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC分类号： H01L21/67 ,  F27D11/00 ,  F27D7/06

CPC分类号： F27D11/00 ,  F27B17/0025 ,  F27D5/0037 ,  F27D7/06 ,  F27D11/02 ,  F27D2005/0081 ,  F27D2007/063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67346 ,  H01L21/67386

摘要： Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate 40 under Si vapor pressure. The SiC substrate 40 is made of, at least in a surface thereof, single crystal SiC. The heat treatment container includes a container part 30 and a substrate holder 50. The container part 30 includes an internal space 33 in which Si vapor pressure is caused. The internal space 33 is partially open. The substrate holder 50 is able to support the SiC substrate 40. When the substrate holder 50 supports the SiC substrate 40, an open portion of the container part 30 is covered so that the internal space 33 is hermetically sealed.

摘要翻译： 提供一种尺寸小且能够有效地对SiC基板进行热处理的热处理容器。 热处理容器是在Si蒸汽压下在SiC衬底40上进行热处理的容器。 SiC衬底40至少在其表面上由单晶SiC制成。 热处理容器包括容器部分30和基板保持件50.容器部分30包括其中引起Si蒸气压的内部空间33。 内部空间33部分打开。 衬底保持器50能够支撑SiC衬底40.当衬底保持器50支撑SiC衬底40时，容纳部分30的开口部分被覆盖，使得内部空间33被气密密封。