Abstract:
Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an active layer that is formed over the substrate and comprises a plurality of active portions; a polarization modulation layer comprising a plurality of polarization modulation portions each of which is disposed on a corresponding one of the plurality of active portions; and a plurality of transistors each of which comprises a source region, a drain region, and a gate structure formed on a corresponding one of the plurality of polarization modulation portions. The transistors have at least three different threshold voltages.
Abstract:
A clock data recovery circuit (CDR) extracts bit data values from a serial bit stream without reference to a transmitter clock. A controllable oscillator produces a regenerated clock signal controlled to match the frequency and phase of transitions between bits and the serial data is sampled at an optimal phase. A phase detector generates early-or-late indication bits for clock versus data transition times, which are accumulated and applied to a second order feedback control with two distinct feedback paths for frequency and phase, combined for correcting the controllable oscillator, selecting a sub-phase and/or determining an optimal phase at which the bit stream data values are sampled. The second order filter is operated at distinct rates such that the phase correction has a latency as short as one clock cycle and the frequency correction latency occurs over plural cycles.