公开(公告)号：US06191476B1

公开(公告)日：2001-02-20

申请号：US08859571

申请日：1997-05-20

申请人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L2310

CPC分类号： G02F1/13454 ,  G02F1/133512 ,  G02F2001/136281 ,  H01L23/36 ,  H01L23/367 ,  H01L27/12 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

摘要翻译： 为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路 。 一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。