公开(公告)号：US07515001B2

公开(公告)日：2009-04-07

申请号：US11517024

申请日：2006-09-07

申请人： Masaaki Kamiya

发明人： Masaaki Kamiya

IPC分类号： H03G3/30

CPC分类号： H03B5/32 ,  H03B5/364 ,  H03F1/0216 ,  H03F3/3022 ,  H03F11/00

摘要： An AC amplifier has an amplification circuit, and a bias circuit connected together by connecting wiring. The bias circuit receives an input of an AC signal from the amplification circuit via the connecting wiring. A DC voltage of the bias circuit conformed to the amplitude of the AC signal of the amplification circuit is supplied to the amplification circuit via the connecting wiring.

摘要翻译： 交流放大器具有放大电路和偏置电路，通过连接布线连接在一起。 偏置电路经由连接布线从放大电路接收AC信号的输入。 与放大电路的交流信号的振幅一致的偏置电路的直流电压通过连接配线供给放大电路。

公开(公告)号：USRE36836E

公开(公告)日：2000-08-29

申请号：US510422

申请日：1995-08-02

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

摘要翻译： 本发明提供一种半导体光阀装置及其制造方法。 该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。 在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。 晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域 ，以便有效地防止背部通道并且切断入射光。

公开(公告)号：US6107163A

公开(公告)日：2000-08-22

申请号：US81987

申请日：1998-05-20

申请人： Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L21/301 ,  B23D57/00 ,  B28D5/04 ,  H01L21/304 ,  H01L21/46

CPC分类号： H01L21/3043 ,  B23D57/0023 ,  B28D5/045

摘要： In a method of manufacturing a semiconductor chip, a wire is traveled in one way to cut a wafer into a plurality of chips while a wire train where wires are arranged by pitches of scribe lines is brought into contact with the scribe lines of the wafer linearly, and an abrasive solution is supplied to a contact portion thereof.

摘要翻译： 在制造半导体芯片的方法中，将导线以一种方式移动以将晶片切割成多个芯片，同时通过划线的间距布置导线的线串与晶片的划线线性地接触 并且将磨料溶液供应到其接触部分。

公开(公告)号：US5982461A

公开(公告)日：1999-11-09

申请号：US834288

申请日：1992-02-14

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/1362 ,  G02F2202/105

摘要： A light valve device has a drive substrate integrated with a drive electrode. A transistor is connected to the drive electrode and a driving circuit energizes the drive electrode through the transistor. An opposed substrate is provided opposed to the drive electrode, and an electrooptical material layer is disposed between the drive substrate and the opposed substrate. The drive substrate has a structure comprising a substrate layer and a semiconductor single crystal thin film layer. The semiconductor single crystal thin film layer is made by thinning a semiconductor single crystal wafer which has been bonded to the substrate layer. The light valve device has a small size and high pixel density and can be formed using miniaturization technology. The light valve can be used for a small size, high resolution video projector and a color matrix display device.

摘要翻译： PCT No.PCT / JP91 / 00580 Sec。 371日期：1992年2月14日 102（e）日期1992年2月14日PCT 1991年4月26日PCT PCT。 WO91 / 17471 PCT出版物 日期1991年11月14日光阀装置具有与驱动电极集成的驱动基板。 晶体管连接到驱动电极，驱动电路通过晶体管对驱动电极通电。 相对的基板与驱动电极相对设置，电光材料层设置在驱动基板和相对的基板之间。 驱动基板具有包括基板层和半导体单晶薄膜层的结构。 半导体单晶薄膜层通过使已结合到基底层的半导体单晶晶片变薄来制造。 光阀装置具有小尺寸和高像素密度，并且可以使用小型化技术形成。 光阀可用于小尺寸，高分辨率的视频投影机和彩色矩阵显示设备。

公开(公告)号：US5672906A

公开(公告)日：1997-09-30

申请号：US588395

申请日：1996-01-18

申请人： Yutaka Saito ,  Takao Akiba ,  Koju Nonaka ,  Masaaki Kamiya ,  Hitomi Watanabe

发明人： Yutaka Saito ,  Takao Akiba ,  Koju Nonaka ,  Masaaki Kamiya ,  Hitomi Watanabe

IPC分类号： H01L27/092 ,  H01L29/32 ,  H01L29/30

CPC分类号： H01L29/32 ,  H01L27/0921

摘要： The present invention is provided for improving latch-up resistance in a semiconductor integrated circuit device employing CMOS structure, for preventing the photoelectric carriers from getting into the sensors and improving the afterimage characteristic in a semiconductor image sensor device, and for impurity the switching characteristic in a semiconductor device having bipolar element. An electron beam of over 2 MeV and 1E15/cm.sup.2 is irradiated to a monocrystal silicon semiconductor region in a substrate and then annealing is performed at a high temperature of over 200.degree. C. As a result, at 150 K., a shallow level traps of which the activation energy from a valence band EV is under 0.1 eV and which is produced at the concentration of about 1.2-1.7E15/cm.sup.3, and a deep level traps of which the activation energy is 0.28-0.32 eV and which is produced at the concentration of about 1.6-2.0E13/cm.sup.3 are obtained. Then a semiconductor substrate having both the level traps stated above as recombination centers in a band gap of silicon is obtained. The chip size of this semiconductor substrate doesn't increase, and furthermore the cost of it is low as an epi wafer is not used. As well, it is possible to manufacture a semiconductor integrated circuit device just before or just after a process step of evaluating the electrical characteristic of a semiconductor integrated circuit device.

摘要翻译： 本发明提供了用于提高采用CMOS结构的半导体集成电路器件中的闭锁电阻，用于防止光电载体进入传感器并提高半导体图像传感器装置中的残留图像特性， 具有双极性元件的半导体器件。 将超过2MeV和1E15 / cm2的电子束照射到衬底中的单晶硅半导体区域，然后在超过200℃的高温下进行退火。结果，在150K下，浅层陷阱 其中价带EV的活化能低于0.1eV，其浓度约为1.2-1.7E15 / cm3，其中活化能为0.28-0.32eV，深度浓度为 得到约1.6-2.0E13 / cm3的浓度。 然后，获得具有上述两级电平阱的半导体衬底作为硅的带隙中的复合中心。 该半导体衬底的芯片尺寸不增加，并且由于不使用epi晶片，因此其成本较低。 同样，可以在评估半导体集成电路器件的电特性的工艺步骤之前或之后制造半导体集成电路器件。

公开(公告)号：US4639755A

公开(公告)日：1987-01-27

申请号：US413492

申请日：1982-08-31

申请人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

发明人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

IPC分类号： H01L29/73 ,  G01K7/01 ,  H01L21/331 ,  H01L27/02 ,  H01L27/082 ,  H01L27/092 ,  H01L27/16 ,  H01L29/66 ,  H01L35/00 ,  H01L23/56

CPC分类号： H01L27/16 ,  H01L27/0211 ,  H01L27/0825 ,  H01L27/092 ,  H01L29/66

摘要： A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.

摘要翻译： 热敏半导体器件具有一种导电类型的半导体衬底，其用作至少两个达林顿连接的晶体管的公共集电极。 第一级晶体管的基极连接到公共集电极以形成第一端子，并且最后级晶体管的发射极形成第二端子。 恒流源连接在第一和第二端子之间。 为了减少温度响应的偏差，可以使用第二集电极区域，并且其可以延伸到比最终级晶体管的发射极的深度更深的深度，以吸收由发射极注入的一些载流子。

公开(公告)号：US4071822A

公开(公告)日：1978-01-31

申请号：US723947

申请日：1976-09-16

申请人： Masaaki Kamiya

发明人： Masaaki Kamiya

IPC分类号： H02H3/247 ,  G01R19/12 ,  G01R19/165 ,  G01R19/00 ,  G01R19/26

CPC分类号： G01R19/12

摘要： The output voltage of a power source is converted into a time signal by a circuit comprising a capacitor to which the voltage is applied, an MOS-FET connected across the capacitor and controlling its discharge rate in accordance with the voltage of the power source and a switching circuit which controls the MOS-FET. The time period representing the voltage of the power source is displayed digitally by counting the number of standard pulses occurring during the time period and digitally displaying the pulse count.

摘要翻译： 通过包括施加电压的电容器的电路将电源的输出电压转换为时间信号，连接在电容器上的MOS-FET，并根据电源的电压控制其放电率， 控制MOS-FET的开关电路。 表示电源电压的时间周期通过计数在该时间段内出现的标准脉冲的数量并以数字方式显示脉冲计数数字显示。

公开(公告)号：US07391279B2

公开(公告)日：2008-06-24

申请号：US11430952

申请日：2006-05-10

申请人： Masaaki Kamiya

发明人： Masaaki Kamiya

IPC分类号： H03B5/32

CPC分类号： H03B5/368 ,  H03B5/364 ,  H03B2200/0012

摘要： A bypass capacitance is connected to a node between first and second self-bias resistances connected in series between an input and an output of an inverter. The bypass capacitance accommodates changes in the output voltage of the inverter to suppress the feedback effect from the output side to the input side of the inverter. That is, the bypass capacitance plays the role of suppressing a decrease in the input impedance by the Miller effect.

摘要翻译： 旁路电容连接到在逆变器的输入和输出之间串联连接的第一和第二自偏压之间的节点。 旁路电容适应变频器的输出电压的变化，以抑制从逆变器的输出侧到输入侧的反馈效应。 也就是说，旁路电容起到通过米勒效应抑制输入阻抗的降低的作用。

公开(公告)号：US06747319B2

公开(公告)日：2004-06-08

申请号：US09803624

申请日：2001-03-09

申请人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

发明人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

IPC分类号： H01L2976

CPC分类号： H01L29/7834 ,  H01L27/0266 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/105 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including multiple high-voltage drive transistors in its output section is improved in electrostatic withstand voltage by connecting electrostatic protection transistors in parallel with the high-voltage drive transistors connected to the output pads. The drain withstand voltage of the electrostatic protection transistors is made lower than the drain withstand voltage of the high-voltage drive transistors. In addition, the channel length of electrostatic protection transistors is made short to enable efficient bipolar operation of the electrostatic protection transistors.

摘要翻译： 在其输出部分中包括多个高电压驱动晶体管的半导体器件通过将静电保护晶体管与连接到输出焊盘的高电压驱动晶体管并联连接来提高静电耐受电压。 使静电保护晶体管的漏极耐受电压低于高电压驱动晶体管的漏极耐受电压。 此外，静电保护晶体管的沟道长度变短，以实现静电保护晶体管的高效双极性操作。

公开(公告)号：US5825064A

公开(公告)日：1998-10-20

申请号：US25822

申请日：1993-03-03

申请人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Ryoji Takada ,  Masaaki Kamiya

发明人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Ryoji Takada ,  Masaaki Kamiya

IPC分类号： G11C17/00 ,  G11C11/56 ,  G11C14/00 ,  G11C16/04 ,  G11C27/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： G11C27/005 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C14/00

摘要： The semiconductor nonvolatile memory has integrated memory cells, each being operative to carry out writing and reading of information in random-access basis and having an electric charge storage structure effective to memorize the information in nonvolatile state. The information is temporarily written into each memory cell in volatile state, and thereafter the temporarily written information is written at one into the respective electric charge storage structure of each memory cell, thereby effecting quick writing of nonvolatile information into the respective memory cells of multi-bits.

摘要翻译： 半导体非易失性存储器具有集成存储单元，每个存储单元可操作以在随机存取的基础上进行信息的写入和读取，并且具有有效地将信息存储在非易失性状态的电荷存储结构。 该信息以易失性状态临时写入每个存储单元，之后将临时写入的信息一个写入每个存储单元的各个电荷存储结构中，从而将非易失性信息快速写入到多个存储单元的各个存储单元中， 位。