公开(公告)号：US20220294237A1

公开(公告)日：2022-09-15

申请号：US17634122

申请日：2020-08-12

申请人： Masami TAKAI ,  Kazuhito KISHI ,  Atsushi OHSHIMA ,  Takahiro IMAI

发明人： Masami TAKAI ,  Kazuhito KISHI ,  Atsushi OHSHIMA ,  Takahiro IMAI

IPC分类号： H02J7/00 ,  H02J7/34

摘要： A power storage apparatus includes a power storage unit including a plurality of power storage devices (C1, C2) storing electric power, a series-and-parallel switching unit configured to switch connection of the plurality of power storage devices into a series connection or a parallel connection, and a series-and-parallel switching control unit configured to control the series-and-parallel switching unit, wherein the series-and-parallel switching control unit controls timing of the switching with hysteresis.

公开(公告)号：US20090207201A1

公开(公告)日：2009-08-20

申请号：US12369254

申请日：2009-02-11

申请人： Sadaharu KOMORI ,  Takeshi ITO ,  Kei HIRUMA ,  Satoru KATAGAMI ,  Takahiro IMAI ,  Toru IGARASHI

发明人： Sadaharu KOMORI ,  Takeshi ITO ,  Kei HIRUMA ,  Satoru KATAGAMI ,  Takahiro IMAI ,  Toru IGARASHI

IPC分类号： B41J29/38

CPC分类号： B41J2/04588 ,  B41J2/04535 ,  B41J2/04541 ,  B41J2/04551 ,  B41J2/04581

摘要： A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an average value or a median value of ejection rates for each nozzle relating to a supply of the drive signal under a plurality of conditions; classifying the plurality of nozzles into a plurality of groups based on the average value or the median value of the ejection rates; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.

摘要翻译： 一种用于设置液体喷射头中的驱动信号的条件的方法，该液体喷射头包括多个线性布置的喷嘴和为每个喷嘴设置的驱动元件，包括：计算每个喷嘴的喷射速率的平均值或中值 与多个条件下的驱动信号的供给有关的喷嘴; 基于喷射速率的平均值或中值，将多个喷嘴分类为多个组; 基于与组相关的喷射速率的统计值，计算与每组相对应的驱动信号的适当条件; 并在对应于组的适当条件之间选择一个适当条件，以便为每个喷嘴设置所选择的适当条件。

公开(公告)号：US20120175641A1

公开(公告)日：2012-07-12

申请号：US13426375

申请日：2012-03-21

申请人： Akihiko NAMBA ,  Yoshiki NISHIBAYASHI ,  Takahiro IMAI

发明人： Akihiko NAMBA ,  Yoshiki NISHIBAYASHI ,  Takahiro IMAI

IPC分类号： H01L29/16 ,  H01L21/205

CPC分类号： H01L29/1602 ,  H01J1/308

摘要： The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. The diamond semiconductor exhibits a carrier concentration (electron concentration) negatively correlated with temperature in a part of a temperature region in which it is turned out to be n-type, and a Hall coefficient positively correlated with temperature. The diamond n-type semiconductor having such a characteristic is obtained, for example, by forming a diamond semiconductor doped with a large amount of a donor element while introducing an impurity other than the donor element onto the diamond substrate.

摘要翻译： 本发明涉及一种金刚石n型半导体，其中载体浓度的变化量在宽的温度范围内完全降低。 金刚石n型半导体包括金刚石基板和形成在其主表面上的金刚石半导体，并被证明为n型。 金刚石半导体表现出在其中显示为n型的温度区域的一部分中的载流子浓度（电子浓度）与温度负相关，并且霍尔系数与温度呈正相关。 具有这种特性的金刚石n型半导体例如通过形成掺杂有大量施主元素的金刚石半导体，同时将施主元素以外的杂质引入到金刚石基板上而获得。

公开(公告)号：US20080311024A1

公开(公告)日：2008-12-18

申请号：US12192515

申请日：2008-08-15

申请人： Kiichi MEGURO ,  Yoshiyuki YAMAMOTO ,  Takahiro IMAI

发明人： Kiichi MEGURO ,  Yoshiyuki YAMAMOTO ,  Takahiro IMAI

IPC分类号： C30B23/00 ,  B01J3/06

CPC分类号： C30B33/00 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/30

摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

摘要翻译： 一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在 将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。