公开(公告)号：US20120199850A1

公开(公告)日：2012-08-09

申请号：US13501373

申请日：2010-01-19

申请人： Misako Honaga ,  Shin Harada

发明人： Misako Honaga ,  Shin Harada

IPC分类号： H01L29/161 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/049 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78

摘要： A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the surface of the semiconductor layer. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the semiconductor layer and the insulating film is not less than 1×1021 cm−3, and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the direction in the surface of the semiconductor layer. A method of manufacturing the silicon carbide semiconductor device is also provided.

摘要翻译： 提供一种碳化硅半导体器件，其包括由碳化硅制成的半导体层，并且具有相对于{0001}面在不小于50°且不超过65°的范围内倾斜的表面，并且绝缘 形成为与半导体层的表面接触的膜。 半导体层与绝缘膜之间的界面10nm以内的氮浓度的最大值不小于1×1021cm-3，半导体器件的通道方向在±10°的范围内 相对于在半导体层的表面中与<-2110>方向正交的方向。 还提供了制造碳化硅半导体器件的方法。