Low temperature-sinterable dielectric composition and thick film
capacitor using the same
    21.
    发明授权
    Low temperature-sinterable dielectric composition and thick film capacitor using the same 失效
    低温烧结电介质组合物和使用其的厚膜电容器

    公开(公告)号:US4308571A

    公开(公告)日:1981-12-29

    申请号:US134281

    申请日:1980-03-26

    摘要: A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.

    摘要翻译: 提供了一种低温可烧结电介质组合物,其烧结组合物通过在不高于1000℃的温度下焙烧由钨酸铅,钛酸铅和二氧化锰组成的均匀混合物制备,具有通式A.Pb(Fe2 其中0.005≤x≤0.65,A = 0.95-0.9995和B = 0.0005-0.05,在25℃下的相对介电常数至少为2000。 ,在25℃下的损耗因子(tanδ)不超过5%,在25℃下的电阻率为至少为10Ω.EGEGA·cm。还提供了一种厚膜电容器,其具有由所述 组成。