公开(公告)号：US20190241476A1

公开(公告)日：2019-08-08

申请号：US16342515

申请日：2017-10-11

申请人： SHOEI CHEMICAL INC.

发明人： Takeshi Nomura ,  Atsushi Nemoto ,  Yukari Sasaki ,  Kazuhiko Takemoto ,  Naomi Kinoshita ,  Yumi Takahashi

IPC分类号： C04B35/47 ,  C04B35/495 ,  C04B35/468 ,  H01G4/12

CPC分类号： C04B35/47 ,  C04B35/468 ,  C04B35/495 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/6562 ,  C04B2235/76 ,  C04B2235/96 ,  H01B3/12 ,  H01G4/12 ,  H01G4/1227 ,  H01G4/30

摘要： According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided.

公开(公告)号：US20180130942A1

公开(公告)日：2018-05-10

申请号：US15861489

申请日：2018-01-03

申请人： FUJIFILM Corporation

发明人： Takami ARAKAWA

IPC分类号： H01L41/187 ,  C23C14/56 ,  C23C14/08 ,  C04B35/622 ,  C04B35/493 ,  H01L41/316 ,  B41J2/14 ,  H01L41/09 ,  C04B35/499 ,  C23C14/34

CPC分类号： H01L41/1876 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/493 ,  C04B35/499 ,  C04B35/62218 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/422 ,  C04B2235/721 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/088 ,  C23C14/34 ,  C23C14/3414 ,  C23C14/564 ,  H01L41/0973 ,  H01L41/316

摘要： Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ∈ (−), and a dielectric loss tan δ (−) satisfy (d31)2/(∈×tan δ×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1-a)1-yNby]Oz  (P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.)

公开(公告)号：US20170190970A1

公开(公告)日：2017-07-06

申请号：US14988659

申请日：2016-01-05

申请人： Xiaomei Guo ,  Kewen Kevin Li ,  Yingyin Kevin Zou ,  Hua Jiang

发明人： Xiaomei Guo ,  Kewen Kevin Li ,  Yingyin Kevin Zou ,  Hua Jiang

IPC分类号： C09K11/77

CPC分类号： C09K11/7769 ,  C03C1/008 ,  C03C17/25 ,  C03C2217/23 ,  C03C2218/113 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/472 ,  C04B35/491 ,  C04B35/499 ,  C04B35/62218 ,  C04B35/803 ,  C04B2235/3236 ,  C04B2235/3249 ,  C04B2235/3255 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/9653

摘要： A nano-composite structure comprises of an amorphous matrix with embedded nano-crystallites. The nano-crystallites are precipitated from the amorphous matrix via heat treatment of a solution mixture of metal salts or metalorganic compounds to an appropriate temperature range and with a suitable duration, or heating of a mixture of non-crystalline compounds. The nano-crystallites are self-assembled in the amorphous matrix without forming agglomerates or distinguished grain boundaries. The nano-composite structure can be used for transparent display, transparent optical ceramics, protection armor, nuclear protection, pulsed power, high voltage electronics, high energy storage system and high power microwave systems.

公开(公告)号：US20160293832A1

公开(公告)日：2016-10-06

申请号：US15086786

申请日：2016-03-31

申请人： NGK INSULATORS, LTD.

发明人： Akifumi MORISHITA ,  Tomohiko HIBINO

IPC分类号： H01L41/187 ,  C04B35/472

CPC分类号： H01L41/1876 ,  B32B18/00 ,  C04B35/472 ,  C04B35/493 ,  C04B35/499 ,  C04B35/62655 ,  C04B35/62675 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3296 ,  C04B2235/442 ,  C04B2235/449 ,  C04B2235/6021 ,  C04B2235/6023 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2237/346 ,  C04B2237/348 ,  H01L41/43

摘要： A piezoelectric/electrostrictive material is composed of Mn and a compound of Pb(Zn, Nb)O3—Pb(Ni, Nb)O3—Pb(Zr, Ti)O3. A ratio of a molar amount of Mn relative to a sum of respective molar amounts of Ni, Zn, Ti, Zr, Nb and Mn is at least 0.001 to no more than 0.015. A ratio of a molar amount of Nb relative to a sum of respective molar amounts of Ni and Zn is at least 2.007 to no more than 2.125.

摘要翻译： 压电/电致伸缩材料由Mn和Pb（Zn，Nb）O3-Pb（Ni，Nb）O3-Pb（Zr，Ti）O3的化合物组成。 Mn的摩尔量相对于Ni，Zn，Ti，Zr，Nb，Mn的摩尔量的总和的比例为0.001以上且0.015以下。 Nb的摩尔量相对于Ni和Zn的摩尔量的总和的比例为2.007以上且2.125以下。

公开(公告)号：US09406866B2

公开(公告)日：2016-08-02

申请号：US14360275

申请日：2012-11-27

申请人： TAIYO YUDEN CO., LTD.

发明人： Shinichiro Ikemi ,  Yutaka Doshida

IPC分类号： H01L41/187 ,  C04B35/493 ,  C04B35/626 ,  H01L41/43 ,  H01L41/047 ,  C04B35/495 ,  C04B35/491

CPC分类号： H01L41/1873 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/499 ,  C04B35/50 ,  C04B35/62685 ,  C04B2235/3203 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3249 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/3296 ,  C04B2235/768 ,  C04B2235/786 ,  C04B2235/85 ,  H01L41/0477 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/43

摘要： A piezoelectric device is provided with: a piezoelectric ceramic layer that is obtained by firing a piezoelectric ceramic composition which contains a perovskite composition and an Ag component; and a conductor layer that sandwiches the piezoelectric ceramic layer, wherein Ag is segregated in voids in a sintered body of the perovskite composition in the piezoelectric ceramic layer. The piezoelectric ceramic composition preferably contains a perovskite composition which is represented by (Pba.Rex){Zrb.Tic,.(Ni1/3Nb2/3)d.(Zn1/3Nb2/3)e}O3 (wherein Re represents La and/or Nd, and a-e and x satisfy the following conditions 0.95≦a≦1.05, 0≦x≦0.05, 0.35≦b

摘要翻译： 压电元件具有：通过烧结含有钙钛矿组合物和Ag成分的压电陶瓷组合物获得的压电陶瓷层; 以及夹着压电陶瓷层的导体层，其中Ag在压电陶瓷层中的钙钛矿组合物的烧结体中的空隙中分离。 压电陶瓷组合物优选含有以（Pba.Rex）{Zrb.Tic，（Ni1 / 3Nb2 / 3）d。（Zn1 / 3Nb2 / 3）e} O3（其中Re表示La和/ 或Nd，并且ae和x满足以下条件：0.95≤a≤1.05,0≤x≤0.05,0.35≤b<0.45,0.35≤c≤0.45,0≤d≤0.10,0.07≤e≤0.20和b + c + d + e = 1），0.05〜0.3质量％的Ag成分相对于钙钛矿组成为氧化物。

公开(公告)号：US20150071029A1

公开(公告)日：2015-03-12

申请号：US14019750

申请日：2013-09-06

申请人： Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

发明人： Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

IPC分类号： G01S7/52

CPC分类号： H01L41/183 ,  A61B8/00 ,  A61B8/4483 ,  C01G33/006 ,  C01P2002/50 ,  C01P2004/03 ,  C04B35/491 ,  C04B35/495 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3249 ,  C04B2235/3255 ,  C04B2235/3286 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/96 ,  C30B29/30 ,  C30B29/32 ,  G03H3/00 ,  H01L41/18 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/332 ,  H01L41/338 ,  H03H9/02015 ,  Y10T29/42

摘要： The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

摘要翻译： 本发明一般涉及高频压电晶体复合材料，器件及其制造方法。 在自适应实施例中，用于涉及成像换能器组件的高频（> 20MHz）应用的改进的成像装置，特别是医学成像装置或距离成像装置被耦合到信号图像处理器。 另外，所提出的发明提出了一种用于基于光刻的微加工压电晶体复合材料的系统及其用途，从而提高了性能参数。

公开(公告)号：US08758497B2

公开(公告)日：2014-06-24

申请号：US13258137

申请日：2010-03-26

申请人： Hideo Takami ,  Masataka Yahagi

发明人： Hideo Takami ,  Masataka Yahagi

IPC分类号： C09D1/00 ,  C23C14/08 ,  C04B35/495 ,  C04B35/462 ,  C04B35/46 ,  C04B35/499 ,  C04B35/626

CPC分类号： C04B35/46 ,  C04B35/462 ,  C04B35/495 ,  C04B35/499 ,  C04B35/62222 ,  C04B35/6262 ,  C04B35/645 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/5436 ,  G11B7/24062 ,  G11B7/2578 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25715

摘要： Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter.

摘要翻译： 本发明提供一种Ti-Nb系烧结体的溅射靶，其中，溅射靶由钛（Ti），铌（Nb）构成，其余为氧和不可避免的杂质，Ti和Nb的原子比为0.39＆ Nb /（Ti + Nb））＆nlE; 0.79。 烧结Ti-Nb基氧化物的溅射靶具有高折射率和低消光系数。 还提供了通过使用上述靶获得的Ti-Nb基氧化物薄膜，其能够进行高速沉积。 薄膜具有优异的透射率，反射率的降低和变化小，并且可用作光学信息记录介质的干涉膜或保护膜，或作为光学记录介质的构成层的一部分。 该薄膜也可以应用于玻璃基板; 也就是说，它可以用作热反射膜，抗反射膜或干涉滤光器。

公开(公告)号：US20120255177A1

公开(公告)日：2012-10-11

申请号：US13440282

申请日：2012-04-05

申请人： Motoki TAKABE ,  Takumi YAMAOKA ,  Takahiro KAMIJO

发明人： Motoki TAKABE ,  Takumi YAMAOKA ,  Takahiro KAMIJO

IPC分类号： B23P17/00

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1612 ,  B41J2/1639 ,  B41J2/1646 ,  B41J2002/14491 ,  B81B3/0078 ,  C04B35/499 ,  Y10T29/42 ,  Y10T29/49124 ,  Y10T29/49155 ,  Y10T29/49163 ,  Y10T29/49401

摘要： The heating and the cooling are conducted. In the heating, atoms of the first layer are rearranged, distortion is removed, and the stress is alleviated. In the cooling, since the first layer has a greater thermal expansion rate than the piezoelectric body, the shrinkage of the first layer caused by the cooling is greater than that of the piezoelectric body, and the thermal stress caused by the difference in thermal expansion is applied to the piezoelectric body. The thermal stress applied to the piezoelectric body serves as a force compressing the piezoelectric body. Therefore, a compressing force is applied to the interface contacting between the first layer and the piezoelectric body to suppress creation of cracks from the interface, and, even though the deformation amount of the piezoelectric body increases, a method for manufacturing an ink jet type recording head with excellent crack resistance may be obtained.

摘要翻译： 进行加热和冷却。 在加热中，第一层的原子被重新排列，去除了变形，并且减轻了应力。 在冷却中，由于第一层具有比压电体更大的热膨胀率，所以由冷却引起的第一层的收缩率大于压电体的收缩，由热膨胀差引起的热应力为 应用于压电体。 施加到压电体的热应力用作压缩体的压力。 因此，压接力被施加到与第一层和压电体之间接触的界面，以抑制从界面产生裂纹，并且即使压电体的变形量增加，也可以使用喷墨型记录方法 可以获得具有优异抗裂性的头部。

公开(公告)号：US20090236557A1

公开(公告)日：2009-09-24

申请号：US12404598

申请日：2009-03-16

申请人： Tomohiko HIBINO ,  Takaaki KOIZUMI

发明人： Tomohiko HIBINO ,  Takaaki KOIZUMI

IPC分类号： H01L41/187

CPC分类号： C04B35/491 ,  C04B35/499 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/81 ,  H01L41/1876 ,  H01L41/1878

摘要： A piezoelectric/electrostrictive ceramic composition is provided which exhibits high density and excellent crystallinity even in the case of firing under lower temperature conditions than in conventional cases, and which also exhibits excellent piezoelectric/electrostrictive properties. An ABO3 compound (first main component) with Bi at the A site and with B1 and B2 elements at the B site (B1 consists of at least one kind of element having an ionic valence of two or less and selected from the group consisting of Mg, Cr, Mn, Fe, Co, Ni, Cu, Zn, and rare-earth elements; and B2 consists of at least one kind of element having an ionic valence of four or more and selected from the group consisting of V, Nb, Ta, Sb, Mo, and W) is dissolved in the form of a solid solution into another ABO3 compound (second main component) with at least Pb at the A site.

摘要翻译： 提供了一种压电/电致伸缩陶瓷组合物，其即使在比常规情况下在低温条件下烧制的情况下也显示出高密度和优异的结晶性，并且也表现出优异的压电/电致伸缩性能。 在A位置具有Bi且在B位置具有B1和B2元素的ABO3化合物（第一主要组分）（B1由至少一种离子价为两个或更少的元素组成，并且选自Mg ，Cr，Mn，Fe，Co，Ni，Cu，Zn和稀土元素; B2由至少一种离子价为4以上的元素构成，选自V，Nb， Ta，Sb，Mo和W）以固溶体的形式溶解在另一个ABO 3化合物（第二主成分）中，在A位置至少有Pb。

公开(公告)号：US20070241304A1

公开(公告)日：2007-10-18

申请号：US11404195

申请日：2006-04-13

申请人： Kui Yao ,  Bee Gan

发明人： Kui Yao ,  Bee Gan

IPC分类号： C04B35/00

CPC分类号： C04B35/62675 ,  C04B35/493 ,  C04B35/499 ,  C04B35/6262 ,  C04B2235/3206 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/656 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/81

摘要： The present invention provides new ferroelectric ceramic materials which can be sintered at a temperature lower than that of the conventional ferroelectric ceramic materials and upon sintering, devices formed of the new ferroelectric ceramic materials possesses excellent piezoelectric properties which are suitable for many industrial applications. The ferroelectric ceramic material includes a composition with a general formula of wPb(Ni1/3Nb2/3)O3−xPb(Zn1/3Nb2/3)O3−yPb(Mg1/3Nb2/3)O3−zPbZrO3−(1−w−x−y−z)PbTiO3, in which 0

摘要翻译： 本发明提供新的铁电陶瓷材料，其可以在比常规铁电陶瓷材料低的温度下烧结，并且在烧结时，由新的铁电陶瓷材料形成的器件具有优异的压电性能，其适用于许多工业应用。 铁电陶瓷材料包括具有通式wPb（Ni 1/3 N 2 Nb 3/3）O 3 -xPb（Zn 3 / 3Nb 2/3 3）O 3 -yPb（Mg 1/3 Nb 2） 其中0 3 0