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17 条记录 (耗时 0.027 秒)

    Plasma processing method and apparatus
    1.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号：US5651867A

    公开(公告)日：1997-07-29

    申请号：US591935

    申请日：1990-10-02

    申请人： Yuichi Kokaku ,  Hiroyuki Kataoka ,  Makoto Kitoh ,  Shigehiko Fujimaki ,  Satoshi Matsunuma ,  Kenji Furusawa ,  Nobuo Nakagawa ,  Katsuo Abe ,  Masaaki Hayashi

    发明人： Yuichi Kokaku ,  Hiroyuki Kataoka ,  Makoto Kitoh ,  Shigehiko Fujimaki ,  Satoshi Matsunuma ,  Kenji Furusawa ,  Nobuo Nakagawa ,  Katsuo Abe ,  Masaaki Hayashi

    IPC分类号： C23C14/34 ,  C23C14/56 ,  C23C16/509 ,  G11B5/84 ,  G11B5/851 ,  H01J37/32

    CPC分类号： H01J37/32623 ,  C23C14/566 ,  C23C16/5096 ,  G11B5/84 ,  G11B5/851 ,  H01J37/32743

    摘要： A plasma processing apparatus comprising: a vacuum container; an evacuation means for keeping the interior of the vacuum container at a pressure not higher than atmospheric pressure; a substrate support device for supporting a substrate to be subjected to plasma processing; an electrode for generating plasma in cooperation with the substrate support; a voltage supply for applying a voltage to the electrode; a gas introducing system for introducing a gaseous material into a space where the plasma is produced; a surrounding member for enclosing the space above the substrate support, and a drive for relatively moving the surrounding member to space an end of the surrounding member proximate from the substrate from at least one of the substrate support and the substrate supported thereon by a distance which is short enough to suppress plasma leakage during the plasma processing and to position the end of the surrounding member away from said at least one of the substrate support and the substrate thereon for charging and discharging of the substrate.

    摘要翻译： 一种等离子体处理装置，包括：真空容器; 用于将真空容器的内部保持在不高于大气压的压力的排气装置; 用于支撑待进行等离子体处理的基板的基板支撑装置; 用于与衬底支撑件协作产生等离子体的电极; 用于向电极施加电压的电压源; 用于将气态物质引入制造等离子体的空间中的气体导入系统; 用于封闭衬底支撑件上方的空间的周围构件以及用于相对移动周围构件的驱动器，用于将基板支撑件和支撑在其上的衬底中的至少一个上的衬底附近的邻近基板的一端远离一定距离， 足够短以抑制等离子体处理期间的等离子体泄漏并且使周围部件的端部远离所述至少一个基板支撑件和其上的基板，以对基板进行充电和放电。

    Sputtering apparatus with film forming directivity
    4.
    发明授权
    Sputtering apparatus with film forming directivity 失效
    具有成膜方向性的溅射装置

    公开(公告)号：US4724060A

    公开(公告)日：1988-02-09

    申请号：US797966

    申请日：1985-11-14

    申请人： Masao Sakata ,  Hideaki Shimamura ,  Shigeru Kobayashi ,  Tsuneyoshi Kawahito ,  Tsuneaki Kamei ,  Katsuo Abe

    发明人： Masao Sakata ,  Hideaki Shimamura ,  Shigeru Kobayashi ,  Tsuneyoshi Kawahito ,  Tsuneaki Kamei ,  Katsuo Abe

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3423 ,  H01J37/3408 ,  H01J2237/3327

    摘要： A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles.Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma.The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.

    摘要翻译： 用于溅射技术的靶通常具有平坦的结构。 本发明成功地赋予溅射成膜的方向性，使得靶的表面设置有凹部，从而限制溅射颗粒的飞行方向。 或者，可以通过在要形成的基板和薄膜之间设置框架来赋予方向性。 该措施需要辅助装置，其中在溅射靶的外周设置壁，以有效地利用等离子体。 本发明通过使用上述技术实际形成膜，并且已经验证了其效果。 预期在技术领域中有广泛的应用，其中在形成微观图案之后，需要进一步形成一个或多个膜。

    Film forming method
    5.
    发明授权
    Film forming method 失效
    成膜方法

    公开(公告)号：US4444635A

    公开(公告)日：1984-04-24

    申请号：US400258

    申请日：1982-07-21

    申请人： Shigeru Kobayashi ,  Nobuo Nakagawa ,  Katsuo Abe ,  Tsuneaki Kamei ,  Kazuyuki Fujimoto

    发明人： Shigeru Kobayashi ,  Nobuo Nakagawa ,  Katsuo Abe ,  Tsuneaki Kamei ,  Kazuyuki Fujimoto

    IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C15/00

    CPC分类号： C23C14/3492 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3458

    摘要： A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.

    摘要翻译： 提供通过等离子体溅射的成膜方法以在基板上获得复合膜。 制备具有不同图案的金属材料的靶板，与基底相对。 通过平面磁控溅射电极结构产生等离子体。 等离子体通过至少三个磁耦合磁极在目标板上磁性地移动，以将材料沉积到具有均匀厚度的膜和基底上所需的组成。

    Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
    7.
    发明授权
    Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure 失效
    用于溅射装置的溅射阴极结构，用于控制由所述溅射阴极结构产生的磁通量的方法，以及使用所述溅射阴极结构形成膜的方法

    公开(公告)号：US4401539A

    公开(公告)日：1983-08-30

    申请号：US343858

    申请日：1982-01-29

    申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

    发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

    IPC分类号： H01J37/34 ,  C23C15/00

    CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

    摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

    摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

    Multi-layered magnetic recording medium and magnetic recording system employing the same
    8.
    发明授权
    Multi-layered magnetic recording medium and magnetic recording system employing the same 失效
    多层磁记录介质和采用该磁记录介质的磁记录系统

    公开(公告)号：US5723198A

    公开(公告)日：1998-03-03

    申请号：US258923

    申请日：1994-06-13

    申请人： Yuzuru Hosoe ,  Yoshihiro Shiroishi ,  Akira Ishikawa ,  Futoshi Tomiyama ,  Kazuetsu Yoshida ,  Tomoo Yamamoto ,  Yotsuo Yahisa ,  Akira Osaki ,  Katsuo Abe ,  Shinji Narishige ,  Naoki Kodama ,  Kiwamu Tanahashi ,  Emi Mangyo

    发明人： Yuzuru Hosoe ,  Yoshihiro Shiroishi ,  Akira Ishikawa ,  Futoshi Tomiyama ,  Kazuetsu Yoshida ,  Tomoo Yamamoto ,  Yotsuo Yahisa ,  Akira Osaki ,  Katsuo Abe ,  Shinji Narishige ,  Naoki Kodama ,  Kiwamu Tanahashi ,  Emi Mangyo

    IPC分类号： G11B5/66

    CPC分类号： G11B5/66 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/265

    摘要： In a magnetic recording system including magnetic recording media, a rotation driving unit for driving these magnetic recording media, read/write magnetic heads, driving apparatus for driving these read/write magnetic heads, and a read/write signal processing apparatus, a reading portion of the respective magnetic heads is arranged by a magnetoresistive head. The magnetic recording media are constructed of multi-layered magnetic media having a plurality of magnetic layers fabricated directly, or via underlayers on a non-magnetic disk substrate, and of non-magnetic intermediate layers arranged among these non-magnetic layers. Furthermore, one coercivity which is measured by applying a magnetic field along a circumferential direction of the magnetic recording media, is selected to be larger than the other coercivity which is measured by applying a magnetic field along a radial direction of the magnetic recording media, so that a higher signal-to-noise ratio is achieved, as compared with that of the conventional magnetic recording system. Since the thickness of the non-magnetic intermediate layers is smaller than or equal to 5 nm, and also the total layer is smaller than or equal to 5 nm, and also the total layer number of the plural magnetic layers is selected to be odd, better characteristics can be achieved. Accordingly, since the MTBF (Mean Time Before Failure) is longer than or equal to 0.15 million hours with high recording density, and the disk substrate and the magnetic head sliders can be mounted at high packaging density, a compact and high-capacity magnetic recording system can be obtained.

    摘要翻译： 在包括磁记录介质的磁记录系统中，用于驱动这些磁记录介质的旋转驱动单元，读/写磁头，用于驱动这些读/写磁头的驱动装置以及读/写信号处理装置，读/ 相应的磁头由磁阻头安排。 磁记录介质由具有直接制造的多个磁性层或通过非磁盘基板上的底层以及布置在这些非磁性层之间的非磁性中间层的多层磁性介质构成。 此外，通过沿着磁记录介质的圆周方向施加磁场来测量的一个矫顽力被选择为大于通过沿着磁记录介质的径向方向施加磁场而测量的其他矫顽力，因此， 与常规磁记录系统相比，实现了更高的信噪比。 由于非磁性中间层的厚度小于或等于5nm，并且总层小于或等于5nm，并且多个磁性层的总层数也被选择为奇数， 可以实现更好的特性。 因此，由于MTBF（平均故障间隔时间）长于或等于0.15万小时，具有高记录密度，并且盘基板和磁头滑块可以以高封装密度安装，紧凑且高容量的磁记录 系统可以得到。