公开(公告)号：US09711394B1

公开(公告)日：2017-07-18

申请号：US15161301

申请日：2016-05-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Hsiang Hung ,  Ssu-I Fu ,  Chih-Kai Hsu ,  Wei-Chi Cheng ,  Jyh-Shyang Jenq

IPC: H01L21/00 ,  H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76889 ,  H01L21/76895 ,  H01L29/41791

Abstract: A method for fabricating a semiconductor device includes the following steps: providing a substrate having an epitaxial layer, a gate structure and an interlayer dielectric thereon, where the epitaxial structure is disposed at sides of the gate structure and the interlayer dielectric covering the epitaxial structure; forming an opening in the interlayer dielectric so that the surface of the epitaxial layer is exposed from the bottom of the opening; performing a rapid thermal process in an inert environment until non-conductive material is generated on the surface of the epitaxial layer; and removing the non-conductive material.