公开(公告)号：US20130273736A1

公开(公告)日：2013-10-17

申请号：US13913535

申请日：2013-06-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuo-Chih Lai ,  Nien-Ting Ho ,  Shu Min Huang ,  Bor-Shyang Liao ,  Chia Chang Hsu

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract translation: 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供其上具有硅化物的半导体衬底; 执行第一快速热处理以将铂从硅化物的表面驱入硅化物; 并在第一快速热处理中除去未反应的铂。