公开(公告)号：US08476164B1

公开(公告)日：2013-07-02

申请号：US13661111

申请日：2012-10-26

Applicant: United Microelectronics Corp.

Inventor： Chin-Fu Lin ,  Chin-Cheng Chien ,  Chih-Chien Liu ,  Chia-Lin Hsu ,  Chun-Yuan Wu

IPC: H01L21/44

CPC classification number: H01L29/665 ,  H01L29/78 ,  H01L29/7845

Abstract: A method of manufacturing semiconductor device is provided. A substrate at least with a patterned silicon-containing layer on the substrate and spacers adjacent to the patterned silicon-containing layer is provided. A metal layer is formed on the substrate and covers the patterned silicon-containing layer and spacers. Then, a capping layer is formed on the metal layer. A first rapid thermal process is performed to at least make a portion of the metal layer react with the substrate around the spacers to form transitional silicides. The capping layer and the unreacted portions of the metal layer are removed. A first nitride film with a first tensile stress S1 is formed on the substrate. A second rapid thermal process is performed to transfer the transitional silicide to a silicide and transfer the first nitride film to a second nitride film with a second tensile stress S2, wherein S2>S1.

Abstract translation: 提供一种制造半导体器件的方法。 提供至少在衬底上具有图案化的含硅层的衬底和与图案化的含硅层相邻的衬垫。 在基板上形成金属层，并覆盖图案化的含硅层和间隔物。 然后，在金属层上形成覆盖层。 进行第一快速热处理以至少使金属层的一部分与衬垫周围的衬底反应以形成过渡的硅化物。 除去覆盖层和金属层的未反应部分。 在基板上形成具有第一拉伸应力S1的第一氮化物膜。 执行第二快速热处理以将过渡硅化物转移到硅化物，并将第一氮化物膜转移到具有第二拉伸应力S2的第二氮化物膜，其中S2> S1。