公开(公告)号：US08169520B2

公开(公告)日：2012-05-01

申请号：US12611494

申请日：2009-11-03

申请人： Shin Iwabuchi ,  Nobuhiro Karasawa

发明人： Shin Iwabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N3/14 ,  H01L31/00

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.

公开(公告)号：US07564079B2

公开(公告)日：2009-07-21

申请号：US11354921

申请日：2006-02-16

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335 ,  H04N5/21

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US20120113292A1

公开(公告)日：2012-05-10

申请号：US13348760

申请日：2012-01-12

申请人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

发明人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

IPC分类号： H04N5/335

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

摘要： A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

摘要翻译： 固态成像装置包括形成在具有照射光的第一基板表面侧的基板上的像素单元和形成元件的第二基板表面侧，并且被相邻单元组分隔开， 元素分离层用于每个像素单元或多个像素单元作为单元。 每个像素单元具有形成在第一基板表面侧上的第一导电阱和形成在第二基板表面侧上的第二导电阱。 第一导电孔从第一基板表面侧接收光，并且具有用于所接收的光的光电转换功能和电荷累积功能。 在第二导电孔中形成检测第一导电阱中的累积电荷并具有阈值调制功能的晶体管。

公开(公告)号：US20090190012A1

公开(公告)日：2009-07-30

申请号：US12320756

申请日：2009-02-04

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US20070091190A1

公开(公告)日：2007-04-26

申请号：US11550492

申请日：2006-10-18

申请人： Shin Iwabuchi ,  Nobuhiro Karasawa

发明人： Shin Iwabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A solid-state imaging apparatus includes a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.

摘要翻译： 一种固态成像装置，包括：以基于像素为基础的基板上形成的多个传感器，并且对从基板的第一表面侧入射的光进行光电转换;以及读出电路，其形成在所述基板的第二表面侧 衬底，其是与第一表面侧相反的一侧，并处理来自多个传感器的信号。 读出电路包括多个晶体管，并且晶体管以对准的方式设置在像素之间的区域中。

公开(公告)号：US20060187327A1

公开(公告)日：2006-08-24

申请号：US11354921

申请日：2006-02-16

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US08687101B2

公开(公告)日：2014-04-01

申请号：US13348760

申请日：2012-01-12

申请人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

发明人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

IPC分类号： H04N5/335 ,  H01L31/062 ,  H01L27/00

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

摘要： A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

摘要翻译： 固态成像装置包括形成在具有照射光的第一基板表面侧的基板上的像素单元和形成元件的第二基板表面侧，并且被相邻单元组分隔开， 元素分离层用于每个像素单元或多个像素单元作为单元。 每个像素单元具有形成在第一基板表面侧上的第一导电阱和形成在第二基板表面侧上的第二导电阱。 第一导电孔从第一基板表面侧接收光，并且具有用于所接收的光的光电转换功能和电荷累积功能。 在第二导电孔中形成检测第一导电阱中的累积电荷并具有阈值调制功能的晶体管。

公开(公告)号：US08319867B2

公开(公告)日：2012-11-27

申请号：US12320756

申请日：2009-02-04

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N3/14 ,  H01L21/00 ,  H01L31/00 ,  H01L27/14

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US08106983B2

公开(公告)日：2012-01-31

申请号：US12331116

申请日：2008-12-09

申请人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

发明人： Isao Hirota ,  Kouichi Harada ,  Nobuhiro Karasawa ,  Yasushi Maruyama ,  Yoshikazu Nitta ,  Hiroyuki Terakago ,  Hajime Takashima ,  Hideo Nomura

IPC分类号： H04N5/335 ,  H01L31/062 ,  H01L27/00

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

摘要： A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

摘要翻译： 固态成像装置包括形成在具有照射光的第一基板表面侧的基板上的像素单元和形成元件的第二基板表面侧，并且被相邻单元组分隔开， 元素分离层用于每个像素单元或多个像素单元作为单元。 每个像素单元具有形成在第一基板表面侧上的第一导电阱和形成在第二基板表面侧上的第二导电阱。 第一导电孔从第一基板表面侧接收光，并且具有用于所接收的光的光电转换功能和电荷累积功能。 在第二导电孔中形成检测第一导电阱中的累积电荷并具有阈值调制功能的晶体管。

公开(公告)号：US20100045834A1

公开(公告)日：2010-02-25

申请号：US12611503

申请日：2009-11-03

申请人： Shin Iwabuchi ,  Nobuhiro Karasawa

发明人： Shin Iwabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.

摘要翻译： 一种固态成像装置，包括以基于像素的基板形成的多个传感器，并且对从基板的第一表面侧入射的光进行光电转换，以及形成在所述基板的第二表面侧的读出电路 衬底，其是与第一表面侧相反的一侧，并处理来自多个传感器的信号。 读出电路包括多个晶体管，并且晶体管以对准的方式设置在像素之间的区域中。