公开(公告)号：US20190244997A1

公开(公告)日：2019-08-08

申请号：US16384480

申请日：2019-04-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Chung Yee ,  Chun Hui Yu

IPC分类号： H01L27/146

CPC分类号： H01L27/14632 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for integrating a CMOS image sensor and an image signal processor (ISP) together using an interposer to form a system in package device module are disclosed. The device module may comprise an interposer with a substrate. An interposer contact is formed within the substrate. A sensor device may be bonded to a surface of the interposer, wherein a sensor contact is bonded to a first end of the interposer contact. An ISP may be connected to the interposer, by bonding an ISP contact in the ISP to a second end of the interposer contact. An underfill layer may fill a gap between the interposer and the ISP. A printed circuit board (PCB) may further be connected to the interposer by way of a solder ball connected to another interposer contact. A thermal interface material may be in contact with the ISP and the PCB.

公开(公告)号：US20190214426A1

公开(公告)日：2019-07-11

申请号：US16352954

申请日：2019-03-14

申请人： OLYMPUS CORPORATION

发明人： Takahiro SHIMOHATA ,  Takatoshi IGARASHI

IPC分类号： H01L27/146 ,  A61B1/05 ,  H04N5/369

CPC分类号： H01L27/14636 ,  A61B1/04 ,  A61B1/05 ,  H01L27/14 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H04N5/369

摘要： An image pickup unit includes: an image pickup device; a device laminate in which a plurality of semiconductor devices are laminated; and a signal cable having a lead wire and a shield lead wire. The plurality of semiconductor devices have cutouts. A groove in parallel with an optical axis direction is configured on a side surface of the device laminate by a plurality of the cutouts which communicate with one another. On cutout surfaces of the semiconductor devices, side electrodes are arranged. The lead wire and the shield lead wire are housed in the respective cutouts which have diameters in accordance with respective diameters of the lead wire and the shield lead wire. The lead wire is bonded to the side electrode and the shield lead wire is bonded to the side electrode.

公开(公告)号：US20190214425A1

公开(公告)日：2019-07-11

申请号：US16358348

申请日：2019-03-19

申请人： Sony Corporation

发明人： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC分类号： H01L27/146 ,  H04N5/225 ,  H01L23/48 ,  H01L21/768 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374 ,  H04N5/379

摘要： A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US20190214423A1

公开(公告)日：2019-07-11

申请号：US16058451

申请日：2018-08-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji Hwang Kim ,  Chajea Jo ,  Hyoeun Kim ,  Jongbo Shim ,  Sang-uk Han

IPC分类号： H01L27/146 ,  H01L23/00

CPC分类号： H01L27/14634 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/16 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0557 ,  H01L2224/08145 ,  H01L2224/09181 ,  H01L2224/16104 ,  H01L2224/16145

摘要： A semiconductor package includes a first semiconductor chip. A second semiconductor chip is below the first semiconductor chip. A third semiconductor chip is below the second semiconductor chip. The second semiconductor chip includes a first surface in direct contact with the first semiconductor chip, and a second surface facing the third semiconductor chip. A first redistribution pattern is on the second surface of the second semiconductor chip and is electrically connected to the third semiconductor chip. The third semiconductor chip includes a third surface facing the second semiconductor chip. A conductive pad is on the third surface.

公开(公告)号：US20190198387A1

公开(公告)日：2019-06-27

申请号：US16287648

申请日：2019-02-27

申请人： Sony Corporation

发明人： Masaki Okamoto

IPC分类号： H01L21/768 ,  H01L27/146 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48 ,  H04N5/378

CPC分类号： H01L21/76804 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/27 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L2224/24145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/9205 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2225/06544 ,  H01L2924/0715 ,  H01L2924/13091 ,  H01L2924/1431 ,  H04N5/378 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

公开(公告)号：US20190131339A1

公开(公告)日：2019-05-02

申请号：US16101211

申请日：2018-08-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： WEI-CHIEH CHIANG ,  KENG-YU CHOU ,  CHUN-HAO CHUANG ,  WEN-HAU WU ,  JHY-JYI SZE ,  CHIEN-HSIEN TSENG ,  KAZUAKI HASHIMOTO

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

摘要： A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

公开(公告)号：US20180350861A1

公开(公告)日：2018-12-06

申请号：US15934484

申请日：2018-03-23

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Tatsuya KUNIKIYO ,  Hidenori SATO ,  Yotaro GOTO ,  Fumitoshi TAKAHASHI

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14632

摘要： A reduction is achieved in the power consumption of a solid-state imaging element including a photoelectric conversion element which converts incident light to charge and a transistor which converts the charge obtained in the photoelectric conversion element to voltage. A photodiode and a charge read transistor which are included in a pixel in the CMOS solid-state imaging element are provided in a semiconductor substrate, while an amplification transistor included in the foregoing pixel is provided in a semiconductor layer provided over the semiconductor substrate via a buried insulating layer. In the semiconductor substrate located in a buried insulating layer region, a p+-type back-gate semiconductor region for controlling a threshold voltage of the amplification transistor is provided.

公开(公告)号：US20180331142A1

公开(公告)日：2018-11-15

申请号：US16045973

申请日：2018-07-26

申请人： SONY CORPORATION

发明人： Atsushi YAMAMOTO ,  Shinji MIYAZAWA ,  Yutaka OOKA ,  Kensaku MAEDA ,  Yusuke MORIYA ,  Naoki OGAWA ,  Nobutoshi FUJII ,  Shunsuke FURUSE ,  Masaya NAGATA ,  Yuichi YAMAMOTO

IPC分类号： H01L27/146 ,  H01L31/0203

CPC分类号： H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/11

摘要： The present technology relates to techniques of preventing intrusion of moisture into a chip.Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

公开(公告)号：US20180301493A1

公开(公告)日：2018-10-18

申请号：US16009137

申请日：2018-06-14

申请人： Micron Technology, Inc.

发明人： Loriston Ford ,  Ulrich C. Boettiger

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

公开(公告)号：US10084018B2

公开(公告)日：2018-09-25

申请号：US15374550

申请日：2016-12-09

申请人： Samsung Electronics Co., Ltd.

发明人： Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin

IPC分类号： H01L27/30 ,  H01L51/44 ,  H01L27/146

CPC分类号： H01L27/307 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14647 ,  H01L51/441

摘要： An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.