公开(公告)号：US4200877A

公开(公告)日：1980-04-29

申请号：US860118

申请日：1977-12-13

申请人： Takaya Suzuki ,  Mitsuru Ura ,  Takuzo Ogawa

发明人： Takaya Suzuki ,  Mitsuru Ura ,  Takuzo Ogawa

IPC分类号： H01L29/864 ,  H01L29/04 ,  H01L29/866 ,  H01L29/90

CPC分类号： H01L29/866 ,  H01L29/04 ,  H01L29/861

摘要： Disclosed is a temperature-compensated voltage reference diode comprising a breakdown PN junction for establishing the zener breakdown voltage, a PN junction for temperature compensation having a temperature coefficient opposite to that of the breakdown PN junction, the breakdown PN junction and the temperature-compensating PN junction being integrally formed in a semiconductor substrate in a laminated fashion with these PN junctions connected in inverse series with each other, and a semiconductor region interposed between the breakdown PN junction and the temperature compensating PN junction for substantially preventing a transistor action from taking place between the respective PN junctions, wherein the semiconductor region is formed of at least one of a polycrystalline semiconductor layer and a single crystal semiconductor layer having an impurity concentration of higher than about 5.times.10.sup.18 atoms/cm.sup.3.

摘要翻译： 公开了一种温度补偿电压参考二极管，其包括用于建立齐纳击穿电压的击穿PN结，用于温度补偿的PN结具有与击穿PN结相反的温度系数，击穿PN结和温度补偿PN 其中所述PN结以彼此反向串联连接的这些PN结一体地形成在半导体衬底中，以及插入在击穿PN结和温度补偿PN结之间的半导体区域，用于基本上防止晶体管的作用在 各个PN结，其中半导体区域由多晶半导体层和杂质浓度高于约5×1018原子/ cm3的单晶半导体层中的至少一个形成。