公开(公告)号：US4100310A

公开(公告)日：1978-07-11

申请号：US648943

申请日：1976-01-14

申请人： Mitsuru Ura ,  Takuzo Ogawa ,  Takaya Suzuki ,  Yosuke Inoue ,  Masayoshi Nomura

发明人： Mitsuru Ura ,  Takuzo Ogawa ,  Takaya Suzuki ,  Yosuke Inoue ,  Masayoshi Nomura

IPC分类号： C30B31/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/31625 ,  C30B31/18 ,  H01L21/00 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  Y10S118/90 ,  Y10S148/006 ,  Y10S148/043 ,  Y10S148/057

摘要： In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

摘要翻译： 在掺杂杂质的方法中，包括混合载气，半导体化合物气体和掺杂气体，并将混合气体导引到反应室，以形成在腔室内的衬底上掺杂有杂质的半导体层或半导体氧化物层， 将掺杂气体与其他气体混合之前的一部分掺杂气体被引导到气体分析器，并且监测掺杂气体中的杂质浓度以控制掺杂气体中的杂质浓度。

公开(公告)号：US4200877A

公开(公告)日：1980-04-29

申请号：US860118

申请日：1977-12-13

申请人： Takaya Suzuki ,  Mitsuru Ura ,  Takuzo Ogawa

发明人： Takaya Suzuki ,  Mitsuru Ura ,  Takuzo Ogawa

IPC分类号： H01L29/864 ,  H01L29/04 ,  H01L29/866 ,  H01L29/90

CPC分类号： H01L29/866 ,  H01L29/04 ,  H01L29/861

摘要： Disclosed is a temperature-compensated voltage reference diode comprising a breakdown PN junction for establishing the zener breakdown voltage, a PN junction for temperature compensation having a temperature coefficient opposite to that of the breakdown PN junction, the breakdown PN junction and the temperature-compensating PN junction being integrally formed in a semiconductor substrate in a laminated fashion with these PN junctions connected in inverse series with each other, and a semiconductor region interposed between the breakdown PN junction and the temperature compensating PN junction for substantially preventing a transistor action from taking place between the respective PN junctions, wherein the semiconductor region is formed of at least one of a polycrystalline semiconductor layer and a single crystal semiconductor layer having an impurity concentration of higher than about 5.times.10.sup.18 atoms/cm.sup.3.

摘要翻译： 公开了一种温度补偿电压参考二极管，其包括用于建立齐纳击穿电压的击穿PN结，用于温度补偿的PN结具有与击穿PN结相反的温度系数，击穿PN结和温度补偿PN 其中所述PN结以彼此反向串联连接的这些PN结一体地形成在半导体衬底中，以及插入在击穿PN结和温度补偿PN结之间的半导体区域，用于基本上防止晶体管的作用在 各个PN结，其中半导体区域由多晶半导体层和杂质浓度高于约5×1018原子/ cm3的单晶半导体层中的至少一个形成。

公开(公告)号：US4164436A

公开(公告)日：1979-08-14

申请号：US925792

申请日：1978-07-18

申请人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

发明人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

IPC分类号： H01L21/22 ,  H01L21/205 ,  H01L21/225 ,  H01L29/04 ,  H01L29/08 ,  H01L29/866

CPC分类号： H01L29/866 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/0834 ,  Y10S148/122 ,  Y10S438/983

摘要： A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate. Simultaneously, the impurities of the other conductivity type are diffused from the amorphous or polycrystal semiconductor layer into the substrate which has a single crystal semiconductor layer of one conductivity type, to form a single crystal semiconductor layer having a p-n junction just below the amorphous or polycrystal semiconductor layer between the amorphous or polycrystalline semiconductor layer and the single crystal semiconductor layer of one conductivity type.In a p-n junction to be formed according to this process, the distribution of the concentration of impurities can be controlled precisely, and the step-like distribution of the concentration of impurities can be attained very well.

摘要翻译： 具有暴露于其表面的一种导电类型的单晶半导体层的半导体衬底保持在比从气相中半导体析出的温度低的温度。 在这种状态下，半导体衬底上的半导体原料气体，含能够形成其它导电类型的半导体的气体和载气的气体被馈送到半导体衬底上。 然后，半导体衬底被加热以在半导体衬底上形成另一导电类型的非晶或多晶半导体层。 同时，其他导电类型的杂质从非晶或多晶半导体层扩散到具有一种导电类型的单晶半导体层的衬底中，以形成具有刚好在无定形或多晶的下面的pn结的单晶半导体层 非晶或多晶半导体层与一种导电类型的单晶半导体层之间的半导体层。

公开(公告)号：US4745088A

公开(公告)日：1988-05-17

申请号：US830713

申请日：1986-02-19

申请人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

发明人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4584 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/935

摘要： The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

摘要翻译： 半导体晶片上的气相生长由多个半导体晶片被保持器保持的装置进行，使得半导体晶片在垂直方向上一个接一个地并且与保持器一起旋转，保持器是 放置在设置在反应容器中的加热器中，原料气体供给喷嘴和原料气体排出喷嘴设置在加热器内，使得半导体晶片插入在气体供给喷嘴和气体排出喷嘴之间，气体供给 喷嘴和气体排出喷嘴分别具有气体供给孔和气体排出孔，使得原料气体可以在水平方向上在每个半导体晶片上流动。 当加热器的温度由加热源升高以加热半导体晶片时，原料气体从气体供给孔供给到每个半导体晶片，因此从原料气体在每个半导体晶片上生长均匀的层 。

公开(公告)号：US4562637A

公开(公告)日：1986-01-07

申请号：US622584

申请日：1984-06-20

申请人： Tadao Kushima ,  Tasao Soga ,  Takaya Suzuki

发明人： Tadao Kushima ,  Tasao Soga ,  Takaya Suzuki

IPC分类号： H01L31/042 ,  H01L31/05 ,  H05K3/36 ,  H01L31/18

CPC分类号： H01L31/1876 ,  H01L31/0512 ,  H05K3/363 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/49169 ,  Y10T29/49179 ,  Y10T29/49181

摘要： A method of manufacturing a solar battery by serially connecting a plurality of solar battery elements arranged spaced from each other. A pair of flexible films are used to sandwich the arrangement of the solar battery elements, and each of the flexible films has a plurality of conductive members formed thereon at positions respectively corresponding to the solar battery elements. However, each conductive member has one end portion extended beyond the surface of the corresponding solar battery element in the direction of the alignment of the solar battery elements. Thus, when the pair of flexible films are disposed to sandwich the solar battery elements, the extended end portion of the conductive member on the side of the light receiving surface of one solar battery element is positioned in the space between adjacent solar battery elements opposite the end portion of the conductive member on the side of the back surface of the next solar battery element. By welding both end portions of the conductive members by, for example, a laser beam, the adjacent solar battery elements are successively connected in series.

摘要翻译： 通过串联连接彼此间隔布置的多个太阳能电池元件来制造太阳能电池的方法。 使用一对柔性膜来夹持太阳能电池元件的布置，并且每个柔性膜在分别对应于太阳能电池元件的位置处形成有多个导电构件。 然而，每个导电构件具有在太阳能电池元件的对准方向上延伸超过相应的太阳能电池元件的表面的一个端部。 因此，当一对柔性膜被设置成夹持太阳能电池元件时，导电构件的一个太阳能电池元件的光接收表面侧的延伸端部位于相邻的太阳能电池元件之间的空间中 导电构件的下一个太阳能电池元件的背面侧的端部。 通过例如通过激光束焊接导电部件的两端部，相邻的太阳能电池元件依次连续地连接。

公开(公告)号：US4388342A

公开(公告)日：1983-06-14

申请号：US154025

申请日：1980-05-28

申请人： Takaya Suzuki ,  Yosuke Inoue ,  Takashi Aoyama

发明人： Takaya Suzuki ,  Yosuke Inoue ,  Takashi Aoyama

IPC分类号： C30B25/16 ,  C23C16/455 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  B05D5/12

CPC分类号： H01L21/02532 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T436/12

摘要： A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

摘要翻译： 通过CVD技术在支撑在反应室内的多个基板的表面上形成具有良好均匀性和再现性的材料层的方法。 本发明的特征是含有反应气体的气体混合物以预定的控制方式从反应室的入口和设置在入口和排气口之间的辅助气体喷嘴供入反应室。 此外，反应室内的气体混合物的一部分从气流中取样以测量反应气体的浓度，并且从测量结果确定来自辅助气体喷嘴的气体供应速率。

公开(公告)号：USD353584S

公开(公告)日：1994-12-20

申请号：US7548

申请日：1993-04-26

申请人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi ,  Kenichi Yamauchi

设计人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi ,  Kenichi Yamauchi

公开(公告)号：US5363682A

公开(公告)日：1994-11-15

申请号：US982982

申请日：1992-11-30

申请人： Ryo Takeda ,  Eisuke Yamanaka ,  Hidenori Kondo ,  Kiyoji Ino ,  Hiroshi Hagihara ,  Takaya Suzuki ,  Sadao Yoshizawa ,  Atsumu Nakamura

发明人： Ryo Takeda ,  Eisuke Yamanaka ,  Hidenori Kondo ,  Kiyoji Ino ,  Hiroshi Hagihara ,  Takaya Suzuki ,  Sadao Yoshizawa ,  Atsumu Nakamura

IPC分类号： B21B1/18 ,  B21B13/12 ,  B21B31/18 ,  B21B31/26 ,  B21B35/10 ,  B21B35/04

CPC分类号： B21B13/12 ,  B21B1/18 ,  B21B2203/182 ,  B21B31/18 ,  B21B31/26 ,  B21B35/10

摘要： A four-roller type sizing mill apparatus for forming round steel rods, comprises two four-roller mills each having two pair of facing rollers. One pair of facing rollers is arranged in rolling direction perpendicular to the rolling direction of the other pair of rollers. The two four-roller mills are arranged in line, with the rolling direction of one of the two four-roller mills being shifted by 45.degree. from the rolling direction of the other four-roller mill. The two pair of rollers of a first four-roller mill positioned closer to the rolling material inlet are separated from each other by a distance which is greater than zero and not greater than five times the projected contact length of one of the pair of rollers positioned closer to the rolling material inlet. The distance is measured between a first standard straight line which passes through the centers of one of the pair of rollers and lies on a plane parallel to the side surfaces of the same pair of rollers and a second standard straight line obtained by projecting the axes of the other pair of rollers onto the above-mentioned plane.

摘要翻译： 用于形成圆钢棒的四辊式定型磨机装置包括两个四辊磨机，每个具有两对面对辊。 一对面对辊沿垂直于另一对辊的轧制方向的轧制方向布置。 两个四辊磨机排列成一列，两个四辊磨机之一的轧制方向从另一个四辊磨机的轧制方向偏移45°。 位于更靠近轧制材料入口的第一个四辊磨机的两对辊彼此分开一段距离，该距离大于零和不大于定位的一对辊之一的投影接触长度的五倍 更靠近滚动材料入口。 在通过一对辊中的一个辊的中心并位于平行于同一对辊的侧表面的平面上的第一标准直线之间测量距离，以及通过将 另一对辊到上述平面上。

公开(公告)号：USD341578S

公开(公告)日：1993-11-23

申请号：US809072

申请日：1991-12-19

申请人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi

设计人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi

公开(公告)号：US4693758A

公开(公告)日：1987-09-15

申请号：US784033

申请日：1985-10-04

申请人： Yutaka Kobayashi ,  Takaya Suzuki

发明人： Yutaka Kobayashi ,  Takaya Suzuki

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/205 ,  H01L21/26 ,  H01L21/268 ,  H01L21/428 ,  H01L21/86 ,  H01L27/12 ,  H01L29/786 ,  H01L21/263 ,  H01L21/225

CPC分类号： H01L27/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/268 ,  H01L29/78657 ,  Y10S117/904 ,  Y10S438/967

摘要： This invention relates to improvements in the SOS technology including the so-called laser annealing processing. According to this invention, a semiconductor layer of an SOS structure consists of the three layers of an interface layer made up of twins, a seed crystalline layer and a re-grown layer far thicker than the preceding two layers when viewed from the side of an insulating substrate. The re-grown layer is formed in such a way that a semiconductor layer deposited on the insulating substrate is irradiated with an electromagnetic wave, for example, pulsed ruby laser beam, which is absorbed substantially uniformly by a portion except the interface layer and the seed crystalline layer. According to this invention, the quality of the re-grown layer is improved, and the mobility of carriers is enhanced. As a result, the operating speed of a semiconductor device employing the SOS structure is raised, and the leakage current is reduced.

摘要翻译： 本发明涉及SOS技术的改进，包括所谓的激光退火处理。 根据本发明，SOS结构的半导体层由三层由双胞胎组成的界面层，晶种层和再生长层组成，当从 绝缘基板。 再生长层以这样的方式形成，使得沉积在绝缘基板上的半导体层被电磁波照射，例如脉冲红宝石激光束，其被除了界面层和种子之外的部分基本均匀地吸收 晶体层。 根据本发明，再生层的质量得到改善，并且载体的迁移率增强。 结果，使用SOS结构的半导体器件的工作速度提高，并且泄漏电流降低。