公开(公告)号：US3584218A

公开(公告)日：1971-06-08

申请号：US3584218D

申请日：1969-08-21

Applicant: HITACHI LTD

Inventor： KOMATSUBARA KIICHI

IPC: G01J3/28 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  G01J3/38

CPC classification number: H01L27/00 ,  G01J3/2803 ,  H01L27/088 ,  H01L29/00

Abstract: A solid state spectrometer utilizing the photoelectric conversion phenomena in the inversion layers of MOS elements, in which a crystal wafer containing a large number of MOS elements is cooled to low temperatures and different gate voltages are applied to the respective elements so that the elements exhibit sharp and mutually different absorption edges for incident infrared rays. The difference between the channel currents flowing in each pair of elements having adjacent absorption edges is derived and a large number of such channel current differences and the corresponding gate voltages are simultaneously scanned and applied to an oscilloscope, whereby the infrared intensity distribution of the incident infrared rays is shown on the face of a cathode-ray tube.