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公开(公告)号：US3473385A
公开(公告)日：1969-10-21
申请号：US3473385D
申请日：1967-05-09
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI
CPC classification number: G01K7/22 , Y10S505/847
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公开(公告)号：US3660171A
公开(公告)日：1972-05-02
申请号：US3660171D
申请日：1969-12-24
Applicant: HITACHI LTD
Inventor： TSUCHIMOTO TAKASHI , TOKUYAMA TAKASHI , KOMATSUBARA KIICHI
IPC: H01L21/00 , H01L21/265 , H01L29/00 , H01L7/54
CPC classification number: H01L21/265 , H01L21/00 , H01L29/00
Abstract: A method for producing a transistor structure utilizing ion implantation, comprising the steps of implanting ions of baseforming impurity into a predetermined portion of a surface of a semiconductor body serving as a collector and heated to a temperature above 600* C. but below the melting point of the semiconductor to form a base region, and thereafter implanting ions of emitter-forming impurity into a predetermined portion of the surface of said base region heated to a temperature in the range of 400* to 600* C. to form an emitter region.
Abstract translation: 一种利用离子注入制造晶体管结构的方法，包括以下步骤：将基底形成杂质的离子注入用作集电体的半导体本体的表面的预定部分中，并加热至高于600℃但低于 熔点以形成基区，然后将发射极形成杂质的离子注入加热到400℃至600℃范围内的温度范围内的所述基区的表面的预定部分中，以形成发射极 地区。
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3.发明授权
公开(公告)号：US3469208A
公开(公告)日：1969-09-23
申请号：US3469208D
申请日：1966-02-25
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI
CPC classification number: H03B9/145
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公开(公告)号：US3926682A
公开(公告)日：1975-12-16
申请号：US51492674
申请日：1974-10-15
Applicant: HITACHI LTD
Inventor： SHIMADA TOSHIKAZU , KOMATSUBARA KIICHI , HASEGAWA SUSUMU , KATO YOSHIKI
Abstract: A uniformly and perfectly amorphous GaP is obtained by irradiating a GaP body with N ions of 200 KeV, at a current density of 1 Mu A/cm2, by an amount of 5 X 1015/cm2, thereby forming a disordered state of GaP in the body to a depth of about 0.5 Mu m from its surface, and heating said GaP body at 430*C which is higher than a transition temperature of GaP from the disordered state to the amorphous state and lower than a crystallization temperature of GaP, for 10 minutes within an argon gas.
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Patent Agency Ranking
公开(公告)号：US3584218A
公开(公告)日：1971-06-08
申请号：US3584218D
申请日：1969-08-21
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI
IPC: G01J3/28 , H01L27/00 , H01L27/088 , H01L29/00 , G01J3/38
CPC classification number: H01L27/00 , G01J3/2803 , H01L27/088 , H01L29/00
Abstract: A solid state spectrometer utilizing the photoelectric conversion phenomena in the inversion layers of MOS elements, in which a crystal wafer containing a large number of MOS elements is cooled to low temperatures and different gate voltages are applied to the respective elements so that the elements exhibit sharp and mutually different absorption edges for incident infrared rays. The difference between the channel currents flowing in each pair of elements having adjacent absorption edges is derived and a large number of such channel current differences and the corresponding gate voltages are simultaneously scanned and applied to an oscilloscope, whereby the infrared intensity distribution of the incident infrared rays is shown on the face of a cathode-ray tube.
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6.发明授权Infrared and far infrared detector or amplifier using mos structure element 失效使用MOS结构元件的红外和红外探测器或放大器
公开(公告)号：US3571593A
公开(公告)日：1971-03-23
申请号：US3571593D
申请日：1969-02-18
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI
CPC classification number: G01J5/08 , G01J5/046 , G01J5/061 , G01J5/0809 , G01J5/0862 , G06G7/62 , H01L29/00 , H01L31/1136 , H03F3/082
Abstract: A device using a MOS structure element, in which the element is cooled to such a low temperature that substantially all of the carriers in the inversion layer populate in the ground level of the quantized energy levels formed in that layer in order that the energization of the electric field or the radiation causes the resonance transition, and in which an infrared or far infrared radiation beam directed to that layer is spectrally detected or amplified by the variation in the channel current or the stimulated emission both of which are caused by the change in the carrier population due to the resonance transition.
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公开(公告)号：US3894792A
公开(公告)日：1975-07-15
申请号：US7276170
申请日：1970-09-16
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI , SHIRAKI YASUHIRO , YAMADA EIZABURO
IPC: C09K3/00 , G02F1/015 , G02F1/03 , G02F1/05 , G02F1/21 , G02F1/29 , H01L21/00 , H01L29/24 , H01L31/00 , H01L31/14 , G02F1/16
CPC classification number: H01L21/00 , G02F1/218 , G02F1/292 , H01L29/242 , H01L31/00
Abstract: A pn junction layer is formed in a semiconductor body having a forbidden band the width of which is greater than the photon energy of an irradiated light beam. The pn junction is forwardly biased through transparent electrodes provided on the opposite principal surfaces to inject carriers at a concentration of the order of 1018 to 1022 cm 3. The refractive index of the semiconductor body is varied according to the carrier concentration to arbitrarily deflect the incident light beam.
Abstract translation: pn结层形成在其宽度大于被照射光束的光子能量的禁带的半导体本体中。 pn结通过设置在相对主表面上的透明电极向前偏置，以以1018至1022cm -3的浓度注入载体。 半导体本体的折射率根据载流子浓度而变化以使入射光束任意偏转。
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公开(公告)号：US3568058A
公开(公告)日：1971-03-02
申请号：US3568058D
申请日：1969-12-30
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI
CPC classification number: G01R21/09
Abstract: A device for detecting small signals of a microwave, millimeter wave and the like level, wherein a detector element is composed of a III-V group semiconductor compound selected from the group consisting of N-type InSb and InAs, and is conditioned so as to be in the state of the quantum limit. The device is responsive to signals having a high speed and/or a broad range of power.
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9.发明授权Radiation detector in a frequency range including infra-red and millimeter waves 失效辐射检测器在频率范围内，包括红外和毫米波
公开(公告)号：US3529164A
公开(公告)日：1970-09-15
申请号：US3529164D
申请日：1968-03-21
Applicant: HITACHI LTD
Inventor： KOMATSUBARA KIICHI , KOTERA NOBUO
CPC classification number: H01L31/10
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