公开(公告)号：US20220157983A1

公开(公告)日：2022-05-19

申请号：US17586730

申请日：2022-01-27

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417

Abstract: A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; a plurality of connection paths, where the plurality of connection paths provide first connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the third layer includes crystalline silicon, and where the second level includes a plurality of capacitors.

公开(公告)号：US20220130905A1

公开(公告)日：2022-04-28

申请号：US17572550

申请日：2022-01-10

Applicant: Monolithic 3D Inc.

Inventor： Deepak C. Sekar ,  Zvi Or-Bach

IPC: H01L27/24 ,  H01L21/268 ,  H01L21/683 ,  H01L21/762 ,  H01L21/822 ,  H01L21/84 ,  H01L27/06 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/12 ,  H01L29/78 ,  H01L29/423 ,  H01L27/22

Abstract: A semiconductor device, the device including: a plurality of transistors, where at least one of the plurality of transistors includes a first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a second single crystal source, channel, and drain, where the second single crystal source, channel, and drain is disposed above the first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a third single crystal source, channel, and drain, where the third single crystal source, channel, and drain is disposed above the second single crystal source, channel, and drain, where at least one of the plurality of transistors includes a fourth single crystal source, channel, and drain, and where the first single crystal source or drain, and the second single crystal source or drain each include n+ doped regions.

公开(公告)号：US20220122877A1

公开(公告)日：2022-04-21

申请号：US17566690

申请日：2021-12-31

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Deepak C. Sekar

IPC: H01L21/683 ,  H01L21/74 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/48 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/112 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/118 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C8/16

Abstract: A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second level is bonded to the first level, where the bonded includes oxide to oxide bonds, where the second transistors each include at least two side-gates, and where through the first metal layers power is provided to at least one of the second transistors.

公开(公告)号：US11309292B2

公开(公告)日：2022-04-19

申请号：US17536019

申请日：2021-11-27

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/768 ,  H01L23/48 ,  H01L23/485 ,  H01L23/522 ,  H01L27/06 ,  H01L29/66 ,  H01L21/74 ,  H01L25/00 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device, the device including: a first silicon layer including a first single crystal silicon; a first metal layer over the first silicon layer; a second metal layer over the first metal layer; a first level including a plurality of transistors over the second metal layer, where the plurality of transistors include a second single crystal silicon; a third metal layer over the first level; a fourth metal layer over the third metal layer, where the fourth metal layer is aligned to the first metal layer with less than 40 nm alignment error; and a via disposed through the first level, where the via has a diameter of less than 450 nm.

公开(公告)号：US20220067262A1

公开(公告)日：2022-03-03

申请号：US17523904

申请日：2021-11-10

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Zeev Wurman

IPC: G06F30/392 ,  G06F30/394

Abstract: A method of designing a 3D Integrated Circuit, the method including: performing partitioning to at least a logic strata, the logic strata including logic, and to a memory strata, the memory strata including memory; then performing a first placement of the memory strata using a 2D placer executed by a computer, where the 2D placer is a Computer Aided Design (CAD) tool for two-dimensional devices, where the 3D Integrated Circuit includes a plurality of connections between the logic strata and the memory strata; and performing a second placement of the logic strata based on the first placement, where the memory includes a first memory array, where the logic includes a first logic circuit controlling the first memory array, where the first placement includes placement of the first memory array, where the second placement includes placement of the first logic circuit based on the placement of the first memory array.

公开(公告)号：US11257867B1

公开(公告)日：2022-02-22

申请号：US17542490

申请日：2021-12-05

Applicant: Monolithic 3D Inc.

Inventor： Deepak C. Sekar ,  Zvi Or-Bach

IPC: H01L21/00 ,  H01L27/24 ,  H01L21/268 ,  H01L21/683 ,  H01L21/762 ,  H01L21/822 ,  H01L21/84 ,  H01L27/06 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/12 ,  H01L29/78 ,  H01L29/423 ,  H01L27/22 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11573 ,  H01L45/00

Abstract: A semiconductor device, the device including: a plurality of transistors, where at least one of the plurality of transistors includes a first single crystal channel, where at least one of the plurality of transistors includes a second single crystal channel, where the second single crystal channel is disposed above the first single crystal channel, where at least one of the plurality of transistors includes a third single crystal channel, where the third single crystal channel is disposed above the second single crystal channel, where at least one of the plurality of transistors includes a fourth single crystal channel, and where the fourth single crystal channel is disposed above the third single crystal channel; and at least one region of oxide to oxide bonds.

公开(公告)号：US11251149B2

公开(公告)日：2022-02-15

申请号：US17485504

申请日：2021-09-27

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Jin-Woo Han ,  Brian Cronquist

IPC: H01L21/46 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L23/544 ,  H01L25/00

Abstract: A semiconductor device, the device including: a first level overlaid by a first memory level, where the first memory level includes a first thinned single crystal substrate; a second memory level, the second memory level disposed on top of the first memory level, where the second memory level includes a second thinned single crystal substrate; and a memory control level disposed on top of the second memory level, where the memory control level is bonded to the second memory level, and where the bonded includes oxide to oxide and conductor to conductor bonding.

公开(公告)号：US11233069B2

公开(公告)日：2022-01-25

申请号：US17396711

申请日：2021-08-08

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Jin-Woo Han

IPC: H01L27/11582 ,  H01L29/47 ,  H01L29/78 ,  H01L29/167 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/02 ,  H01L27/11578 ,  H01L29/792 ,  H01L27/11514 ,  H01L27/11551 ,  H01L27/11519

Abstract: A 3D device, the device including: a first level including logic circuits; and a second level including a plurality of memory cells, where the first level is bonded to the second level, where the bonded includes oxide to oxide bonds, and where the logic circuits include a programmable logic circuit.

公开(公告)号：US20220005821A1

公开(公告)日：2022-01-06

申请号：US17461075

申请日：2021-08-30

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Jin-Woo Han ,  Eli Lusky

IPC: H01L27/11556 ,  H01L27/11582

Abstract: A 3D memory device, the device including: a first vertical pillar, the first vertical pillar includes a transistor source; a second vertical pillar, the second vertical pillar includes the transistor drain, where the first vertical pillar and the second vertical pillar each functions as a source or functions as a drain for a plurality of overlaying horizontally-oriented memory transistors, where at least of one of the plurality of overlaying horizontally-oriented memory transistors is disposed between the first vertical pillar and the second vertical pillar, where the plurality of overlaying horizontally-oriented memory transistors are self-aligned being formed following a same lithography step, and where the first vertical pillar includes metal.

公开(公告)号：US20210407991A1

公开(公告)日：2021-12-30

申请号：US17472667

申请日：2021-09-12

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist

IPC: H01L27/06 ,  H01L23/36 ,  H01L23/50 ,  H01L23/60 ,  H01L21/324 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

Abstract: A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; a plurality of connection paths, where the plurality of connection paths provide first connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, and where the third layer includes crystalline silicon; and at least one temperature sensor.