公开(公告)号：US20080206683A1

公开(公告)日：2008-08-28

申请号：US11733471

申请日：2007-04-10

Applicant: Cheng-Ming Lin ,  Chue San Yoo

Inventor： Cheng-Ming Lin ,  Chue San Yoo

IPC: G03C5/00 ,  G03B27/42

CPC classification number: G03F7/70916 ,  G03F7/70866

Abstract: The present disclosure provides a lithography apparatus. The lithography apparatus includes a radiation source providing a radiation energy with a wavelength selected from the group consisting of 193 nm, 248 nm, and 365 nm; a lens system configured approximate to the radiation source; a mask chamber proximate to the lens system, configured to hold a mask and operable to provide a single atom gas to the mask chamber; and a substrate stage configured to hold a substrate and receive the radiation energy through the lens system and the mask during an exposing process.

Abstract translation: 本公开提供一种光刻设备。 光刻设备包括：辐射源，其提供波长选自193nm，248nm和365nm的波长的辐射能; 配置为近似于辐射源的透镜系统; 靠近透镜系统的掩模室，被配置为保持掩模并可操作以向掩模室提供单个原子气体; 以及衬底台，被配置为在曝光过程期间保持衬底并且通过透镜系统和掩模接收辐射能量。

公开(公告)号：US07393617B2

公开(公告)日：2008-07-01

申请号：US11425423

申请日：2006-06-21

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03F1/00

CPC classification number: G03F1/32 ,  G03F1/72

Abstract: In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.

Abstract translation: 根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。 本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。 或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。

公开(公告)号：US20070281563A1

公开(公告)日：2007-12-06

申请号：US11444354

申请日：2006-06-01

Applicant: Chung Chih Feng ,  Yuan Fang Tsai ,  Cheng Ming Lin ,  Chien Chia Huang

Inventor： Chung Chih Feng ,  Yuan Fang Tsai ,  Cheng Ming Lin ,  Chien Chia Huang

IPC: B32B27/14 ,  B32B5/02 ,  B32B5/16

CPC classification number: C09D175/04 ,  B32B27/12 ,  B32B27/18 ,  C08L75/04 ,  C09J175/04 ,  D06N3/0097 ,  D06N3/145 ,  Y10T442/2082 ,  Y10T442/259 ,  Y10T442/2762

Abstract: The present invention relates to a luminary material comprising a substrate; a luminary layer formed on a surface of the substrate; and a surface layer comprising a first portion and a second portion, wherein the first portion allows stronger light to be emitted from the luminary layer than the second portion. The luminary material according to the invention exhibits various colors, patterns and/or textures formed on the surface. Therefore, the luminary material is qualified as a decorative material in the light. A method for manufacturing the luminary material is also provided.

Abstract translation: 本发明涉及一种包含基底的发光材料; 形成在所述基板的表面上的发光层; 以及包括第一部分和第二部分的表面层，其中所述第一部分允许比所述第二部分从所述发光体层发射更强的光。 根据本发明的发光材料表现出形成在表面上的各种颜色，图案和/或纹理。 因此，灯光材料在光线中被认为是装饰材料。 还提供了用于制造照明材料的方法。

公开(公告)号：US20050153214A1

公开(公告)日：2005-07-14

申请号：US10755500

申请日：2004-01-12

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00 ,  G03F9/00 ,  G03G16/00

CPC classification number: G03F1/32 ,  G03F1/72

Abstract: In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.

Abstract translation: 根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。 本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。 或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。