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公开(公告)号:US20070051979A1
公开(公告)日:2007-03-08
申请号:US11511293
申请日:2006-08-29
IPC分类号: H01L29/739
CPC分类号: H01L29/7787 , H01L23/3171 , H01L29/2003 , H01L2924/0002 , H01L2924/13063 , H01L2924/13091 , H01L2924/00
摘要: A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so that a stress caused by the surface protection film on the surface of the semiconductor layer is minimized.
摘要翻译: 半导体器件包括布置在生长在衬底上的化合物半导体层上的多个电极以及保护电极之间的化合物半导体层上的半导体层的表面的表面保护膜。 控制表面保护膜的折射率使得由半导体层表面上的表面保护膜引起的应力最小化。