公开(公告)号：US20240355717A1

公开(公告)日：2024-10-24

申请号：US18636035

申请日：2024-04-15

申请人： Navitas Semiconductor Limited

发明人： Alfred Hesener ,  Daniel M. Kinzer ,  Vincent Dessard ,  Marco Giandalia

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H03K17/687

CPC分类号： H01L23/49575 ,  H01L23/49562 ,  H01L24/08 ,  H01L24/48 ,  H01L25/0652 ,  H03K17/6871 ,  H01L2224/08145 ,  H01L2224/08245 ,  H01L2224/48138 ,  H01L2224/48175 ,  H01L2924/01029 ,  H01L2924/0493 ,  H01L2924/1205 ,  H01L2924/13091 ,  H01L2924/182 ,  H03K2217/0063 ,  H03K2217/0072

摘要： An electronic system is disclosed. The electronic system includes an electronic package having a base with a plurality of external terminals, and further having an electrically insulative material at least partially encapsulating the base, a controller circuit disposed within the electronic package and referenced to a first ground, a first and second driver circuits disposed within the electronic package and referenced to a second ground and arranged to receive isolated control signals from the controller circuit, and a bidirectional switch disposed within the electronic package and referenced to the second ground and arranged to receive drive signals from the first and second driver circuits. In one aspect, the first and second driver circuits are isolated from the controller circuit via capacitors, or magnetics, or optocouplers, or magneto resistors.

公开(公告)号：US20240347427A1

公开(公告)日：2024-10-17

申请号：US18598163

申请日：2024-03-07

申请人： Infineon Technologies AG

发明人： Edward FÜRGUT ,  Teck Sim LEE ,  Guey Yong CHEE ,  Thai Kee GAN ,  Thomas BEMMERL ,  Markus FINK

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/49555 ,  H01L23/49537 ,  H01L23/49562 ,  H01L24/08 ,  H01L25/072 ,  H01L2224/08221 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A leadframe is disclosed. In one example, the leadframe comprises a die pad and a first lead comprising an inner portion and an external portion. The first lead comprises at least one elevation portion extending over a predetermined length in a longitudinal or lateral direction of the first lead. The external portion is configured to be used for external electrical connection. In another example, a semiconductor package having a leadframe is disclosed.

公开(公告)号：US12119294B2

公开(公告)日：2024-10-15

申请号：US18177953

申请日：2023-03-03

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Michael J. Seddon ,  Francis J. Carney

IPC分类号： H01L23/498 ,  H01L21/02 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/482 ,  H01L23/495 ,  H01L23/544 ,  H01L25/00 ,  H01L25/065 ,  H01L27/02 ,  H01L27/088 ,  H01L27/14 ,  H01L27/146 ,  H01L29/08 ,  H02M3/158 ,  H01L23/14 ,  H01L23/15 ,  H01L23/367

CPC分类号： H01L23/49827 ,  H01L21/02035 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/4825 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/565 ,  H01L21/67069 ,  H01L21/6835 ,  H01L21/76877 ,  H01L21/76898 ,  H01L21/78 ,  H01L22/12 ,  H01L22/26 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/544 ,  H01L23/562 ,  H01L24/00 ,  H01L24/05 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/14 ,  H01L27/14683 ,  H01L29/0847 ,  H02M3/158 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3677 ,  H01L23/49816 ,  H01L27/14625 ,  H01L27/14685 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2225/06555 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3511

摘要： A through-substrate via structure includes a conductive via structure including trench portions at a first major surface of a substrate and extending to a first distance. A first insulating structure is over sidewalls of the trench portions, and a conductive material is over the first insulating structure. A recessed region extends from a second major surface of the substrate to a second distance greater than the first distance and laterally overlaps and interfaces both trench portions. A second insulating structure includes a first portion within the recessed region and a second portion adjacent to the second major surface outside of the recessed region, which includes an outer surface overlapping the second major surface outside of the recessed region. A first conductive region includes a proximate end coupled to the conductive material through openings in the first portion, and an opposite distal that is outward from the second portion.

公开(公告)号：US12113009B2

公开(公告)日：2024-10-08

申请号：US18454582

申请日：2023-08-23

申请人： Rohm Co., Ltd.

发明人： Koshun Saito ,  Yasufumi Matsuoka

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

CPC分类号： H01L23/49844 ,  H01L23/3121 ,  H01L24/49 ,  H01L25/072 ,  H01L2924/13091

摘要： A semiconductor device includes a semiconductor element, a first lead including a mounting portion for the semiconductor element and a first terminal portion connected to the mounting portion, and a sealing resin covering the semiconductor element and a portion of the first lead. The mounting portion has a mounting-portion front surface and a mounting-portion back surface opposite to each other in a thickness direction, with the semiconductor element mounted on the mounting-portion front surface. The sealing resin includes a resin front surface, a resin back surface and a resin side surface connecting the resin front surface and the resin back surface. The mounting-portion back surface of the first lead is flush with the resin back surface. The first terminal portion includes a first-terminal-portion back surface exposed from the resin back surface, in a manner such that the first-terminal-portion back surface extends to the resin side surface.

公开(公告)号：US20240321663A1

公开(公告)日：2024-09-26

申请号：US18187924

申请日：2023-03-22

申请人： WOLFSPEED, INC.

发明人： Afshin DADVAND ,  Dev BALARAMAN

IPC分类号： H01L23/31 ,  B05D1/12 ,  B05D1/26 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29

CPC分类号： H01L23/3135 ,  B05D1/12 ,  B05D1/26 ,  H01L21/565 ,  H01L23/291 ,  H01L23/296 ,  H01L24/32 ,  H01L24/48 ,  B05D2430/00 ,  B05D2505/50 ,  B05D2601/00 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2924/12032 ,  H01L2924/13091

摘要： A device may include device parts, a composite coating material arranged on one or more of the device parts, and a molding compound arranged on and/or around one or more of the device parts. Moreover, the device may include where the composite coating material may include a polymer matrix including and/or incorporating ceramic particles.

公开(公告)号：US20240319454A1

公开(公告)日：2024-09-26

申请号：US18611499

申请日：2024-03-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junghoon Kang

IPC分类号： G02B6/42 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC分类号： G02B6/4219 ,  G02B6/4206 ,  H01L23/49822 ,  H01L24/08 ,  H01L24/16 ,  H01L25/0652 ,  H01L2224/08146 ,  H01L2224/08155 ,  H01L2224/16104 ,  H01L2224/16157 ,  H01L2924/0665 ,  H01L2924/13091 ,  H01L2924/182

摘要： Provided is a semiconductor package including a printed circuit board including a cavity extending inward from an upper surface thereof, an optical waveguide extending onto the cavity along the upper surface of the printed circuit board, a first semiconductor chip positioned inside the cavity and including a photonic integrated circuit overlapping a portion of the optical waveguide in a vertical direction, an interposer on the first semiconductor chip, and a second semiconductor chip on the interposer.

公开(公告)号：US20240312875A1

公开(公告)日：2024-09-19

申请号：US18243080

申请日：2023-09-06

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Rie ARIMA ,  Kazuki MATSUO ,  Masaru IZUMISAWA

IPC分类号： H01L23/482 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L23/482 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L23/49513 ,  H01L24/32 ,  H01L24/41 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40991 ,  H01L2224/4103 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4809 ,  H01L2224/48108 ,  H01L2224/48245 ,  H01L2224/49111 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2924/13091

摘要： According to one embodiment, a semiconductor device includes a metal base, a terminal separated from the metal base, a semiconductor chip including a back-surface-side electrode connected to the metal base and a front-surface-side electrode provided on a front surface opposite to the back-surface-side electrode, a connection member including a first end portion connected to the front-surface-side electrode of the semiconductor chip and a second end portion connected to the terminal, and a conductive member provided on the front-surface-side electrode of the semiconductor chip and covering a region of the front-surface-side electrode that is not connected to the first end portion of the connection member.

公开(公告)号：US20240304528A1

公开(公告)日：2024-09-12

申请号：US18599704

申请日：2024-03-08

申请人： Infineon Technologies Austria AG

发明人： Ralf Otremba ,  Leo Aichriedler ,  Daniel Hölzl ,  Gerald Wriessnegger ,  Soumya Susovita Nayak

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/11 ,  H01L25/16

CPC分类号： H01L23/49562 ,  H01L23/49555 ,  H01L23/49568 ,  H01L24/40 ,  H01L24/48 ,  H01L25/112 ,  H01L25/117 ,  H01L25/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/48245 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13062 ,  H01L2924/13091

摘要： A power transistor chip package includes a power transistor chip having a first load electrode on a first side, a second load electrode on a second (opposite) side, and a control electrode. The power transistor chip is disposed on a chip pad, with the first side facing the pad and the first load electrode electrically connected to the pad. An encapsulation body encapsulates the power transistor chip and includes a footprint side, a top (opposite) side, and side faces extending between the footprint and top sides. A first package load terminal is electrically connected to the first load electrode. Part I and part II second package load terminals are both electrically connected directly to the second load electrode. A package control terminal is electrically connected to the control electrode. The part I and part II second package load terminals are aligned with opposite sides faces of the encapsulation body.

公开(公告)号：US12089409B2

公开(公告)日：2024-09-10

申请号：US18339526

申请日：2023-06-22

申请人： KIOXIA CORPORATION

发明人： Masayoshi Tagami ,  Jun Iijima ,  Ryota Katsumata ,  Kazuyuki Higashi

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L25/065 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  G11C5/02 ,  G11C16/04 ,  G11C16/26

CPC分类号： H10B43/27 ,  H01L23/5226 ,  H01L24/04 ,  H01L25/0657 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  G11C5/02 ,  G11C16/0483 ,  G11C16/26 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/05095 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80201 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2924/1304 ,  H01L2924/13091 ,  H01L2924/1434 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2924/00012 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/1304 ,  H01L2924/00012 ,  H01L2224/05647 ,  H01L2924/00014

摘要： According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

公开(公告)号：US12080600B2

公开(公告)日：2024-09-03

申请号：US17010610

申请日：2020-09-02

申请人： STATS ChipPAC Pte. Ltd.

发明人： Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L21/78 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538

CPC分类号： H01L21/78 ,  H01L21/4857 ,  H01L21/561 ,  H01L22/14 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/04 ,  H01L24/05 ,  H01L2224/02125 ,  H01L2224/02145 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/02351 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05083 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05551 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/0535 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/186 ,  H01L2924/351 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/92 ,  H01L21/78 ,  H01L2224/19 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/94 ,  H01L2224/11

摘要： A semiconductor device has a semiconductor die. A first insulating layer is disposed over the semiconductor die. A first via is formed in the first insulating layer over a contact pad of the semiconductor die. A first conductive layer is disposed over the first insulating layer and in the first via. A second insulating layer is disposed over a portion of the first insulating layer and first conductive layer. An island of the second insulating layer is formed over the first conductive layer and within the first via. The first conductive layer adjacent to the island is devoid of the second insulating layer. A second conductive layer is disposed over the first conductive layer, second insulating layer, and island. The second conductive layer has a corrugated structure. A width of the island is greater than a width of the first via.