公开(公告)号：US07968893B2

公开(公告)日：2011-06-28

申请号：US12210472

申请日：2008-09-15

Applicant: Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

Inventor： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

IPC: H01L31/0256 ,  H01L33/00 ,  H01L21/00

CPC classification number: H01L33/40 ,  H01L33/32

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract translation: 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

公开(公告)号：US20100109026A1

公开(公告)日：2010-05-06

申请号：US12266300

申请日：2008-11-06

Applicant: Grigory ONUSHKIN ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

Inventor： Grigory ONUSHKIN ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/385

Abstract: Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

Abstract translation: 提供一种发光器件及其制造方法。 发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二 导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层 第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

公开(公告)号：US20090159920A1

公开(公告)日：2009-06-25

申请号：US12216568

申请日：2008-07-08

Applicant: Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Cheol Soo Sone ,  Yu Seung Kim

Inventor： Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Cheol Soo Sone ,  Yu Seung Kim

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

Abstract translation: 提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上 第一层并由透明导电氧化物形成。 包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。 此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。