公开(公告)号：US20120223660A1

公开(公告)日：2012-09-06

申请号：US13474240

申请日：2012-05-17

申请人： Pun Jae Choi ,  Masayoshi Koike ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Masayoshi Koike ,  Sang Yeob Song

IPC分类号： H05B33/14

CPC分类号： H01L33/50 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.

摘要翻译： 白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。 该装置还包括用于发射红色波长的光的装置。

公开(公告)号：US07935970B2

公开(公告)日：2011-05-03

申请号：US12258292

申请日：2008-10-24

申请人： Sang-Yeob Song ,  Ji Hye Shim ,  Bum Joon Kim

发明人： Sang-Yeob Song ,  Ji Hye Shim ,  Bum Joon Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  H01L33/02

摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

摘要翻译： 氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

公开(公告)号：US07851808B2

公开(公告)日：2010-12-14

申请号：US12259073

申请日：2008-10-27

申请人： Sang-Yeob Song ,  Ji Hye Shim ,  Bum Joon Kim

发明人： Sang-Yeob Song ,  Ji Hye Shim ,  Bum Joon Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  H01L33/02

摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

摘要翻译： 氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

公开(公告)号：US20080054271A1

公开(公告)日：2008-03-06

申请号：US11692660

申请日：2007-03-28

申请人： Sang-Yeob SONG ,  Ji Hye SHIM ,  Bum Joon KIM

发明人： Sang-Yeob SONG ,  Ji Hye SHIM ,  Bum Joon KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02

摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

摘要翻译： 氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

公开(公告)号：US08476639B2

公开(公告)日：2013-07-02

申请号：US13323365

申请日：2011-12-12

申请人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L29/15

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20120119249A1

公开(公告)日：2012-05-17

申请号：US13253515

申请日：2011-10-05

申请人： Tae-hyung KIM ,  Cheol-soo SONE ,  Jong-in YANG ,  Sang-yeob SONG ,  Si-hyuk LEE

发明人： Tae-hyung KIM ,  Cheol-soo SONE ,  Jong-in YANG ,  Sang-yeob SONG ,  Si-hyuk LEE

IPC分类号： H01L33/36 ,  H01L33/52

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

摘要： An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.

摘要翻译： 一种LED及其制造方法。 LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并与两种化合物连接的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 另一侧表面上的第二电极连接层连接到第二电极层。

公开(公告)号：US07795054B2

公开(公告)日：2010-09-14

申请号：US11987712

申请日：2007-12-04

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

公开(公告)号：US20100099212A1

公开(公告)日：2010-04-22

申请号：US12429458

申请日：2009-04-24

申请人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

发明人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

IPC分类号： H01L33/00 ,  H01L21/306 ,  H01L21/26

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20100090247A1

公开(公告)日：2010-04-15

申请号：US12419590

申请日：2009-04-07

申请人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

发明人： Jong In YANG ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC分类号： H01L33/00 ,  H01L21/268 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/268 ,  H01L33/0062 ,  H01L33/16

摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

摘要翻译： 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US20090095965A1

公开(公告)日：2009-04-16

申请号：US12258292

申请日：2008-10-24

申请人： Sang-Yeob SONG ,  Ji Hye Shim ,  Bum Joon Kim

发明人： Sang-Yeob SONG ,  Ji Hye Shim ,  Bum Joon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02

摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.