摘要:
When a public line is used for a remote copy function of storage in a disaster recovery (DR) system, the online performance is degraded due to the increase and decrease of the line utilization rate. Therefore, it is desired to change the remote copy function depending on the line utilization rate. Also, there is the possibility of data loss if disaster occurs during the copy between storage devices. Therefore, it is desired to perform the processing to detect the data status immediately before the occurrence of the disaster. By switching the synchronous transmission and the asynchronous transmission in accordance with the increase and decrease of the response time of the remote copy function between storage devices, the online performance of the primary site can be maintained without being influenced by the line utilization rate, and the data loss can be detected based on the used remote copy function.
摘要:
An optical display, and method for forming an optical display, having improved antireflection properties and durability is formed by applying a transferable antireflection material to an optical substrate through the use of an in-mold or heat press technique or alternatively by an ultraviolet exposure technique. The transferable antireflection material is formed prior to application to the substrate and has at least a low refractive index layer and a high refractive index layer coupled to a release film. The low index reflection layer is preferably a silicon-modified fluoropolymer material having good durability, low refractivity, and appropriate adhesion to the release layer and subsequently applied high index refraction layer. The optical display is then coupled to a housing of an article for use.
摘要:
A method for prevention of increase in particles in copolymer for semiconductor resist, which comprises passing, through a filter containing a resin having an amino group and/or an amide bond, a copolymer solution for semiconductor resist which contains a copolymer for semiconductor resist having a polar group-containing recurring unit and an alicyclic structure-containing recurring unit and which contains no ionic additive. With the method, there can be obtained a copolymer for semiconductor resist, which can be suitably used in a resist film used for formation of a fine pattern in semiconductor production and which is very low in formation of particles during storage and accordingly generates substantially no defect after development.