公开(公告)号：US20240337938A1

公开(公告)日：2024-10-10

申请号：US18380852

申请日：2023-10-17

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Takayuki Fujiwara

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  C08F220/22

CPC classification number: G03F7/0392 ,  C08F212/24 ,  C08F220/1806 ,  C08F220/22

Abstract: A resist composition comprising a base polymer containing repeat units (a) having a salt structure containing a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having formula (1).

公开(公告)号：US20240337927A1

公开(公告)日：2024-10-10

申请号：US18597253

申请日：2024-03-06

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima

IPC: G03F7/004 ,  C07C25/18 ,  C07C43/29 ,  C07C309/11 ,  C07C309/12 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C43/29 ,  C07C309/11 ,  C07C309/12 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/10 ,  C07C2602/42 ,  C07C2603/74

Abstract: The onium salt is capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The alkanesulfone type onium salt whose anion has a bulky substituent at α-position of a sulfo group and a bulky aromatic ring structure is capable of generating an acid having an adequate acid strength and controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is provided.

公开(公告)号：US20240319607A1

公开(公告)日：2024-09-26

申请号：US18733466

申请日：2024-06-04

Applicant: CENTRAL GLASS COMPANY, LIMITED

Inventor： Yuzuru KANEKO ,  Takashi AOKI ,  Yusuke NOMURA ,  Keiko SASAKI ,  Asuka SANO

IPC: G03F7/38 ,  C08F220/22 ,  C08F236/16 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  H01L21/02 ,  H01L21/3065 ,  H01L33/00 ,  H01L33/44 ,  H10K50/115 ,  H10K71/00 ,  H10K71/13

CPC classification number: G03F7/38 ,  C08F220/22 ,  C08F236/16 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/0392 ,  H01L21/02046 ,  H01L21/3065 ,  H01L33/005 ,  H01L33/44 ,  H10K50/115 ,  H10K71/00 ,  H10K71/135 ,  G03F7/2006 ,  H01L2933/0025

Abstract: The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film to obtain a first substrate with a patterned film, the substrate with a patterned film including a substrate and a patterned film on the substrate, the patterned film containing a fluorine-containing copolymer having a specific repeating unit; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film.

公开(公告)号：US20240310735A1

公开(公告)日：2024-09-19

申请号：US18675505

申请日：2024-05-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hui WENG ,  Ching-Yu CHANG

IPC: G03F7/40 ,  G03F1/56 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F1/56 ,  G03F7/0392 ,  H01L21/0274

Abstract: A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.

公开(公告)号：US20240295814A1

公开(公告)日：2024-09-05

申请号：US18424025

申请日：2024-01-26

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Keiichi IBATA ,  Tomotaka YAMADA ,  Takuya UEHARA

IPC: G03F7/039 ,  G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  G03F7/32

CPC classification number: G03F7/0392 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0758 ,  G03F7/322

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate an acid. In General Formula (I0), Mm+ represents a sulfonium cation or an iodonium cation, m represents an integer of 1 or more, and * represents a bonding site

公开(公告)号：US20240280900A1

公开(公告)日：2024-08-22

申请号：US18404506

申请日：2024-01-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/004 ,  C07C25/18 ,  C07C309/43 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  C07D333/76 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C309/43 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  C07D333/76 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2601/18 ,  C07C2602/10 ,  C07C2602/42 ,  C07C2603/74

Abstract: This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.

公开(公告)号：US20240272553A1

公开(公告)日：2024-08-15

申请号：US18611436

申请日：2024-03-20

Applicant: FUJIFILM Corporation

Inventor： YUMA KURUMISAWA ,  MICHIHIRO SHIRAKAWA ,  AHIYOSHI GOTO ,  HIDEYUKI ISHIHARA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/2004 ,  G03F7/322

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition including: a resin that includes a repeating unit A represented by specific formula (1), a repeating unit B represented by specific formula (2), and a repeating unit C represented by specific formula (3), that is increased in polarity by the action of an acid, and that has a main chain to be cleaved upon exposure to light; and a compound that generates an acid upon irradiation with actinic rays or radiation. The invention also provide an actinic ray-sensitive or radiation-sensitive film using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.

公开(公告)号：US20240272552A1

公开(公告)日：2024-08-15

申请号：US18407776

申请日：2024-01-09

Applicant: Applied Materials, Inc.

Inventor： GABRIELA ALVA ,  ZHENXING HAN ,  MADHUR SACHAN ,  CHI-I LANG ,  LIN ZHOU ,  LEQUN LIU ,  NASRIN KAZEM

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/11 ,  G03F7/2026 ,  G03F7/70033

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.

公开(公告)号：US20240241444A1

公开(公告)日：2024-07-18

申请号：US18426343

申请日：2024-01-30

Applicant: FUJIFILM Corporation

Inventor： Shuhei YAMAGUCHI

IPC: G03F7/039 ,  G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0045

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes: a resin (A) that has a specific repeating unit and whose polarity increases by the action of an acid; and an acidic compound (F) having an iodine atom. The resin (A) is a different compound from the acidic compound (F), and the acidic compound (F) is a nonionic compound.

公开(公告)号：US20240219836A1

公开(公告)日：2024-07-04

申请号：US18531373

申请日：2023-12-06

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takayuki NAGASAWA ,  Satoshi WATANABE ,  Yuta MATSUZAWA ,  Masaaki KOTAKE ,  Keiichi MASUNAGA

IPC: G03F7/11 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/11 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/2037 ,  G03F7/322

Abstract: The present invention is a conductive polymer composition containing: (A) a polyaniline-based conductive polymer having at least one repeating unit of the formula (1); and (B) a hydrogencarbonate including a cation of the formula (2-1) or (2-2). Here, R1 to R4 each represent a hydrogen atom, an acidic group, a hydroxy group, a nitro group, a halogen atom, a linear or branched alkyl group, a hydrocarbon group containing a hetero atom, or a hydrocarbon group partially substituted with a halogen atom. X represents a monovalent alkali metal selected from lithium, sodium, potassium, and cesium, R101 to R104 each represent a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an oxoalkenyl group, an aryl group, an aralkyl group, or an aryloxoalkyl group. R101 and R102, R103 and R104, and R101, R102, and R104 optionally form a ring. This provides a conductive polymer composition that can form an antistatic film for electron beam resist writing.