公开(公告)号：US5693578A

公开(公告)日：1997-12-02

申请号：US606681

申请日：1996-02-26

申请人： Toshiro Nakanishi ,  Yasuhisa Sato ,  Masaki Okuno

发明人： Toshiro Nakanishi ,  Yasuhisa Sato ,  Masaki Okuno

IPC分类号： H01L21/316 ,  H01L21/306 ,  H01L29/78 ,  H01L21/02

CPC分类号： H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.

摘要翻译： 通过将硅晶片设置在能够引入氧化气体并被抽真空的室中并通过在氧化气氛中加热硅晶片来形成氧化硅膜的方法。 该方法包括以下步骤：将硅晶片输送到室中而不用硅晶片与空气接触; 将含臭氧的气体引入所述室并将所述室的内部设定为预定压力; 并将硅晶片加热到预定温度并氧化硅晶片的表面。 预定压力优选在200托和0.1托之间。 臭氧可以通过向硅晶片的上部空间施加紫外线而从氧产生。 要引入的臭氧的温度优选低。 为了不过度加热臭氧并将硅晶片加热到高温，优选加入红外线加热。