公开(公告)号：US09228259B2

公开(公告)日：2016-01-05

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/44 ,  C23F1/00 ,  C23F1/08 ,  H01L21/3213

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种处理沉积反应器的方法。 该方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺杂铝的碳化钛膜或掺铝的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。