公开(公告)号：US12077839B1

公开(公告)日：2024-09-03

申请号：US18239747

申请日：2023-08-29

申请人： Chow Sang Sang Jewellery Company Limited

发明人： Wai Kei Cheung ,  Shuk Kwan Mak ,  Candice Wing Jong Tong

IPC分类号： C22C5/02 ,  C22C1/02 ,  C22F1/02 ,  C22F1/14 ,  C23F1/00

CPC分类号： C22C5/02 ,  C22C1/02 ,  C22F1/02 ,  C22F1/14 ,  C23F1/00

摘要： This invention provides an alloy with an interference thin film and the method for making the same. In one embodiment, said alloy consists essentially of 55.0-78.0 wt % Au, 8.0-24.0 wt % Ag, 8.0-24.0 wt % Cu and 0.0-3.0 wt % deoxidizer, and said interference thin film is grown on a surface of said alloy and has a thickness of less than 200 nm; wherein said interference thin film exhibits a patination color.

公开(公告)号：US12046476B2

公开(公告)日：2024-07-23

申请号：US17703997

申请日：2022-03-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Hsien Li ,  Ying-Chuen Wang ,  Chieh-Yi Shen ,  Li-Min Chen ,  Ming-Hsi Yeh ,  Kuo-Bin Huang

IPC分类号： H01L21/306 ,  C09K13/00 ,  C23F1/00 ,  C23F1/10 ,  H01L21/308 ,  H01L21/768

CPC分类号： H01L21/30608 ,  C09K13/00 ,  C23F1/00 ,  C23F1/10 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/76813 ,  H01L21/76829

摘要： A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

公开(公告)号：US12031077B2

公开(公告)日：2024-07-09

申请号：US17805332

申请日：2022-06-03

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Hyeon Woo Park ,  Seok Hyeon Nam ,  Myung Ho Lee ,  Myung Geun Song

IPC分类号： C09K13/10 ,  C09K13/00 ,  C09K13/04 ,  C23F1/00 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  H01L21/306 ,  H01L21/3213

CPC分类号： C09K13/10 ,  C09K13/00 ,  C09K13/04 ,  C23F1/00 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134

摘要： The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

公开(公告)号：US20240035166A1

公开(公告)日：2024-02-01

申请号：US18108002

申请日：2023-02-09

申请人： SEMES CO., LTD.

发明人： Jee Young LEE ,  Won Geun KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Won Sik SON

IPC分类号： C23F1/00

CPC分类号： C23F1/00

摘要： A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

公开(公告)号：US11807946B2

公开(公告)日：2023-11-07

申请号：US16118343

申请日：2018-08-30

申请人： Lawrence Livermore National Security, LLC

发明人： Juergen Biener ,  Monika M. Biener ,  Alex V. Hamza ,  Marcus Baeumer ,  Arne Wittstock ,  Joerg Weissmueller ,  Dominik Kramer ,  Raghavan Nadar Viswanath

IPC分类号： C23F1/00

CPC分类号： C23F1/00 ,  F05D2230/25 ,  F05D2300/133

摘要： A method of controlling macroscopic strain of a porous structure includes contacting a porous structure with a modifying agent which chemically adsorbs to a surface of the porous structure and modifies an existing surface stress of the porous structure. Additional methods and systems are also presented.

公开(公告)号：US20230268356A1

公开(公告)日：2023-08-24

申请号：US18155982

申请日：2023-01-18

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Yong-Hwan RYU ,  Woo Jin CHO ,  Jong-Hyun CHOUNG ,  Jae Uoon KIM ,  Sun-Jin SONG ,  Hyun Duck CHO

IPC分类号： H01L27/12 ,  G03F7/038 ,  G03F7/00

CPC分类号： H01L27/1288 ,  G03F7/0035 ,  G03F7/0382 ,  H01L27/1262 ,  C23F1/00

摘要： A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

公开(公告)号：US20230155120A1

公开(公告)日：2023-05-18

申请号：US18157567

申请日：2023-01-20

申请人： Group14 Technologies, Inc.

发明人： Aaron M. FEAVER ,  Leah A. THOMPKINS ,  Katharine GERAMITA ,  Benjamin E. KRON ,  Avery J. SAKSHAUG ,  Sarah FREDRICK ,  Henry R. COSTANTINO ,  Chad GOODWIN ,  Christopher TIMMONS ,  Farshid AFKHAMI ,  Adam STRONG

IPC分类号： H01M4/38 ,  C01B33/021 ,  H01M10/0525 ,  C23F1/00 ,  H01M8/1037 ,  H01M4/36 ,  H01M4/587

CPC分类号： H01M4/386 ,  C01B33/021 ,  H01M10/0525 ,  C23F1/00 ,  H01M8/1037 ,  H01M4/366 ,  H01M4/587 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/17 ,  C01P2006/40 ,  C01P2006/80 ,  C01P2006/16 ,  C01P2006/21 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  H01M2004/021

摘要： Composites of porous nano-featured silicon and various materials, such as carbon, are provided. The composites find utility in various applications, such as electrical energy storage electrodes and devices comprising the same.

公开(公告)号：US11649529B2

公开(公告)日：2023-05-16

申请号：US16168016

申请日：2018-10-23

申请人： Novelis Inc.

发明人： Liangliang Li ,  Theresa Elizabeth MacFarlane ,  Sazol Kumar Das ,  Peter Lloyd Redmond ,  Changook Son ,  Dewei Zhu ,  Yudie Yuan ,  Luis Fanor Vega ,  Milan Felberbaum ,  Julio Malpica ,  Brian Paradis ,  Alp Manavbasi ,  Dechao Lin

IPC分类号： C22C21/00 ,  B23K11/11 ,  C23F1/00 ,  C23F1/20 ,  C23F17/00 ,  C22F1/047 ,  B21B1/46 ,  C22C21/12 ,  C22C21/02 ,  C22F1/043 ,  C22F1/053 ,  B23K103/10 ,  C22C21/08

CPC分类号： C22C21/00 ,  B21B1/46 ,  B23K11/11 ,  C22C21/02 ,  C22C21/12 ,  C22F1/043 ,  C22F1/047 ,  C22F1/053 ,  C23F1/00 ,  C23F1/20 ,  C23F17/00 ,  B23K2103/10 ,  C22C21/08

摘要： Disclosed are aluminum alloy products and methods of making and processing such products. Thus, disclosed are aluminum alloy products exhibiting controllable surface properties, including excellent bond durability, low contact resistance, and corrosion resistance. Aluminum alloy products described herein include a migrant element, a subsurface portion having a concentration of the migrant element, and a bulk portion having a concentration of the migrant element. The aluminum alloy product comprises an enrichment ratio of 4.0 or less, wherein the enrichment ratio is a ratio of the migrant element concentration in the subsurface portion to the concentration in the bulk portion. Additionally, the aluminum alloy products surface and/or subsurface can contain phosphorus (e.g., elemental phosphorus or oxidized phosphorus). The phosphorus containing surface provides reduced electronic stress on an electrode tip of a resistance spot welding apparatus, and an extended service lifetime (e.g., weld cycles to failure) of the electrode tip.

公开(公告)号：US20180348635A1

公开(公告)日：2018-12-06

申请号：US16039341

申请日：2018-07-19

申请人： Samsung Display Co., Ltd.

发明人： Min Hyuck Kang ,  Eun Ae Kwak ,  Dong Eon Lee ,  Gug Rae Jo

IPC分类号： G03F7/075 ,  C07F7/18 ,  C23F1/00 ,  G03F7/00 ,  G02B5/30 ,  C23F1/02

CPC分类号： G03F7/0751 ,  C07F7/1804 ,  C07F7/1872 ,  C23F1/00 ,  C23F1/02 ,  G02B5/3058 ,  G03F7/0002 ,  Y02P20/582

摘要： A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.

公开(公告)号：US20180331356A1

公开(公告)日：2018-11-15

申请号：US15752566

申请日：2016-08-12

申请人： Christopher Timmons ,  Chad Goodwin ,  Henry R. Costantino ,  Sarah Fredrick ,  Sakshaug J. Avery ,  Benjamin E. Kron ,  Katharine Geramita ,  Leah A. Thompkins ,  Aaron M. Feaver ,  EnerG2 Technologies, Inc.

发明人： Aaron M. Feaver ,  Leah A. Thompkins ,  Katharine Geramita ,  Benjamin E. Kron ,  Avery J. Sakshaug ,  Sarah Fredrick ,  Henry R. Costantino ,  Chad Goodwin ,  Christopher Timmons

IPC分类号： H01M4/38 ,  C01B33/021 ,  H01M10/0525

CPC分类号： H01M4/386 ,  C01B33/021 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2006/10 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/16 ,  C01P2006/17 ,  C01P2006/21 ,  C01P2006/40 ,  C01P2006/80 ,  C23F1/00 ,  H01M4/366 ,  H01M4/587 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027

摘要： Porous silicon and methods for preparation and use of the same are disclosed. The porous silicon materials have utility either alone or in combination with other materials, for example, combined with carbon particles for energy storage applications.