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    Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
    35.
    发明授权
    Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists 失效
    形成相对于深紫外光刻胶不污染的抗反射膜的方法

    公开(公告)号：US06528341B1

    公开(公告)日：2003-03-04

    申请号：US09806808

    申请日：2001-07-18

    申请人： Patrick Schiavone ,  Frédéric Gaillard

    发明人： Patrick Schiavone ,  Frédéric Gaillard

    IPC分类号： H01L2100

    CPC分类号： H01L21/0276 ,  G02B1/113 ,  G03F7/091 ,  Y10S438/954

    摘要： A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists (DUV photoresists) on each of a series of silicon semiconductor substrates successively introduced into the same reactor chamber includes a step of plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxynitride antireflection film and treatment of the antireflection film with an oxygen plasma. The reactor chamber is cleaned before the successive introduction of each of the substrates by purging the reactor chamber using an oxygen-free gas plasma and then depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.

    摘要翻译： 在连续导入同一反应室的一系列硅半导体基板中的每一个上形成相对于深紫外光致抗蚀剂（DUV光致抗蚀剂）不污染的氮氧化硅抗反射膜的方法包括等离子体增强化学气相沉积 PECVD）和氧等离子体的防反射膜的处理。 在通过使用无氧气体等离子体清洗反应器室然后通过使用前体气体的等离子体增强化学气相沉积沉积氮氧化硅覆盖层来连续引入每个基板之前，清洁反应室。