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    Storage system for ink stamps
    33.
    发明申请
    Storage system for ink stamps 审中-公开
    油墨邮票存储系统

    公开(公告)号：US20050005786A1

    公开(公告)日：2005-01-13

    申请号：US10692710

    申请日：2003-10-23

    申请人： Mark Armstrong

    发明人： Mark Armstrong

    IPC分类号： B41K1/58 ,  B31F1/07

    CPC分类号： B41K1/58

    摘要： An ink-stamp storage system for magnetically storing ink stamps. The storage system has a storage panel with a strip of ferrous metal. The ink stamps are provided with a magnet and are magnetically mountable on the storage panel. One type of storage system is a rack that has a rotatable base element with multiple storage panels mounted on the base element; another type of storage system has a flat base with a single storage panel fixedly attached to the base. An anti-slip means is provided on the underside of the flat base, to prevent the base from inadvertently moving across a desk-top surface.

    摘要翻译： 一种用于磁性存储墨迹的墨水记录存储系统。 存储系统具有带黑色金属条的存储面板。 墨迹设置有磁体并且磁性地安装在存储面板上。 一种类型的存储系统是具有可旋转的基座元件的机架，多个存储面板安装在基座元件上; 另一种类型的存储系统具有平坦的基座，其中单个存储面板固定地连接到基座。 在平底座的下侧设有防滑装置，以防止底座无意中移动穿过台面。

    Systems and methods for determining and sending a preferred of two electronic mail communications
    34.
    发明授权
    Systems and methods for determining and sending a preferred of two electronic mail communications 有权

    公开(公告)号：US09911128B2

    公开(公告)日：2018-03-06

    申请号：US12740079

    申请日：2008-10-31

    申请人： Ben Chestnut ,  Mark Armstrong ,  Chadwick Morris

    发明人： Ben Chestnut ,  Mark Armstrong ,  Chadwick Morris

    IPC分类号： G06F15/16 ,  G06Q30/02

    CPC分类号： G06Q30/02

    摘要： Systems and methods for determining and sending a preferred of two electronic mail communications or messages (‘emails’) to a group to increase likelihood of its review. Information for conducting a test between two emails, referred to as A email and B email, is collected. The information may identify a particular group, and segments A and B of the group. The information may provide content for the emails and include differentiation information between the emails. Determination information on how to select one of the emails as the preferred email and when to select the preferred email may be collected. The information is used to send the A email to the segment A, to send the B email to the segment B, to determine the preferred email between the A email and the B email, and to send the preferred email to at least a portion of the particular group.

    INTEGRATION METHODS TO FABRICATE INTERNAL SPACERS FOR NANOWIRE DEVICES
    38.
    发明申请
    INTEGRATION METHODS TO FABRICATE INTERNAL SPACERS FOR NANOWIRE DEVICES 有权
    用于制造纳米器件的内部间隔件的集成方法

    公开(公告)号：US20140001441A1

    公开(公告)日：2014-01-02

    申请号：US13539195

    申请日：2012-06-29

    申请人： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

    发明人： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

    IPC分类号： H01L29/78 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00

    CPC分类号： H01L29/0673 ,  B82Y40/00 ,  H01L21/30604 ,  H01L21/3105 ,  H01L21/31155 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78 ,  H01L29/78696

    摘要： A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

    摘要翻译： 公开了一种具有多个内部间隔物的纳米线器件和用于形成所述内部间隔物的方法。 在一个实施例中，半导体器件包括设置在衬底上方的纳米线堆叠，纳米线堆叠具有多个垂直堆叠的纳米线，围绕多个纳米线中的每一个缠绕的栅极结构，限定器件的沟道区，栅极 结构，其具有栅极侧壁，在沟道区域的相对侧上的一对源极/漏极区域; 以及位于纳米线堆叠内部的两个相邻纳米线之间的栅极侧壁的一部分上的内部间隔物。 在一个实施例中，内部间隔物通过在与沟道区相邻蚀刻的凹坑中沉积间隔物形成。 在一个实施例中，通过沟道区蚀刻凹坑。 在另一个实施例中，通过源/漏区蚀刻凹坑。