公开(公告)号：US20120068253A1

公开(公告)日：2012-03-22

申请号：US13052161

申请日：2011-03-21

申请人： Shigeto Oota ,  Masaru Kidoh ,  Hideaki Aochi

发明人： Shigeto Oota ,  Masaru Kidoh ,  Hideaki Aochi

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory region and a non-memory region. The memory region includes a stacked structural body, a semiconductor pillar, a memory layer, an inner insulating film and an outer insulating film. The stacked structural body includes a plurality of electrode films stacked alternately along a first direction with a plurality of inter-electrode insulating films. The semiconductor pillar pierces the stacked structural body in the first direction. The memory layer is provided between the semiconductor pillar and each of the plurality of electrode films. The inner insulating film is provided between the memory layer and the semiconductor pillar. The outer insulating film is provided between the memory layer and each of the plurality of electrode films. The non-memory region is provided with the memory region along a second direction orthogonal to the first direction. The non-memory region includes an insulating part.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括存储器区域和非存储器区域。 存储区包括层叠结构体，半导体柱，存储层，内绝缘膜和外绝缘膜。 叠层结构体包括沿着第一方向交替堆叠的多个电极间隔离膜和多个电极间绝缘膜。 半导体柱沿第一方向刺穿叠层结构体。 存储层设置在半导体柱与多个电极膜中的每一个之间。 内部绝缘膜设置在存储层和半导体柱之间。 外绝缘膜设置在存储层和多个电极膜中的每一个之间。 非存储区域沿着与第一方向正交的第二方向设置有存储区域。 非记忆区域包括绝缘部分。