Avalanche Photodetector Element
    31.
    发明申请
    Avalanche Photodetector Element 有权
    雪崩光电探测器元件

    公开(公告)号:US20140138787A1

    公开(公告)日:2014-05-22

    申请号:US14087983

    申请日:2013-11-22

    Applicant: IMEC

    Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

    Abstract translation: 公开了一种用于将光信号转换成电信号的雪崩光电检测器元件,其包括输入波导和光电检测器区域,所述光电检测器区域包括至少一个本征区域,至少一个p掺杂区域和至少一个n掺杂区域 ,掺杂区域和至少一个本征区域形成至少一个PIN结雪崩光电二极管,输入波导和光电检测器区域相对于彼此布置,使得由输入波导传导的光信号基本上进入 光电检测器区域到PIN结雪崩光电二极管,PIN结雪崩光电二极管将光信号转换为电信号,其特征在于光电检测器区域包括多于一个p掺杂区域和/或n掺杂区域,由此这些p 掺杂区域和/或n掺杂区域物理地排列成阵列。

Patent Agency Ranking