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    OPTICAL ALIGNMENT COMPENSATION SYSTEM FOR A GAS DETECTION SYSTEM
    1.
    发明公开
    OPTICAL ALIGNMENT COMPENSATION SYSTEM FOR A GAS DETECTION SYSTEM 审中-公开

    公开(公告)号：US20240077411A1

    公开(公告)日：2024-03-07

    申请号：US18027679

    申请日：2021-09-27

    Applicant: IMEC VZW ,  IMEC USA NANOELECTRONICS DESIGN CENTER, INC. ,  Universiteit Gent

    Inventor： Giorgio Signorello ,  Orges Furxhi ,  Joris Van Campenhout ,  Anton Vasiliev ,  Olivier Rousseaux

    IPC: G01N21/27

    CPC classification number: G01N21/274 ,  G01N2201/0636

    Abstract: The present disclosure relates to an optical alignment compensation system for a gas detection system, in particular, to an integrated alignment compensation system for an open-path gas sensing system. The optical alignment compensation system of the disclosure is able to compensate for unwanted drifts of a retroreflector. The optical alignment system comprises an array of transceiver pairs, wherein each transceiver pair is configured to transmit and receive light with an optical spectrum in an absorption region of a gas to be detected. Further, it comprises a retroreflector arranged at a nominal position and configured to reflect the light. Further, it comprises an optical element arranged and configured to direct the light from at least one of the transceiver pairs along an optical path through the gas to the retroreflector, to receive the light reflected by the retroreflector along the optical path, and to direct the reflected light to the respective transceiver pair. Further, it comprises a control unit configured to select one of the transceiver pairs for transmitting and receiving the light, wherein the control unit is configured to select the transceiver pair that receives the reflected light with the highest signal response.

    Detector device with photoconductive body
    3.
    发明授权
    Detector device with photoconductive body 有权

    公开(公告)号：US10830696B2

    公开(公告)日：2020-11-10

    申请号：US16200352

    申请日：2018-11-26

    Applicant: IMEC vzw ,  Stichting IMEC Nederland

    Inventor： Peter Offermans ,  Joris Van Campenhout

    IPC: G01N21/3586 ,  G01J3/42 ,  G02B6/122 ,  G01J5/28 ,  G02B6/12 ,  G01J5/10 ,  G01J5/08 ,  G01J1/04 ,  G01J1/44 ,  G01J3/02 ,  H01L31/09

    Abstract: A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.

    Radiation Coupler
    7.
    发明申请
    Radiation Coupler 有权
    辐射耦合器

    公开(公告)号：US20150177459A1

    公开(公告)日：2015-06-25

    申请号：US14560909

    申请日：2014-12-04

    Applicant: IMEC VZW

    Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

    IPC: G02B6/122

    CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

    Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

    Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

    Method for fabricating an avalanche photodiode device
    8.
    发明授权
    Method for fabricating an avalanche photodiode device 有权

    公开(公告)号：US11600735B2

    公开(公告)日：2023-03-07

    申请号：US17370578

    申请日：2021-07-08

    Applicant: IMEC VZW

    Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

    IPC: H01L31/107 ,  H01L31/18

    Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

    Avalanche Photodetector Element
    10.
    发明申请
    Avalanche Photodetector Element 有权
    雪崩光电探测器元件

    公开(公告)号：US20140138787A1

    公开(公告)日：2014-05-22

    申请号：US14087983

    申请日：2013-11-22

    Applicant: IMEC

    Inventor： Geert Hellings ,  Joris Van Campenhout ,  Peter Verheyen

    IPC: H01L31/107 ,  H01L31/0232

    CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

    Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

    Abstract translation: 公开了一种用于将光信号转换成电信号的雪崩光电检测器元件，其包括输入波导和光电检测器区域，所述光电检测器区域包括至少一个本征区域，至少一个p掺杂区域和至少一个n掺杂区域 ，掺杂区域和至少一个本征区域形成至少一个PIN结雪崩光电二极管，输入波导和光电检测器区域相对于彼此布置，使得由输入波导传导的光信号基本上进入 光电检测器区域到PIN结雪崩光电二极管，PIN结雪崩光电二极管将光信号转换为电信号，其特征在于光电检测器区域包括多于一个p掺杂区域和/或n掺杂区域，由此这些p 掺杂区域和/或n掺杂区域物理地排列成阵列。

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