公开(公告)号：US20220158092A1

公开(公告)日：2022-05-19

申请号：US16952234

申请日：2020-11-19

Applicant: International Business Machines Corporation

Inventor： Praneet Adusumilli ,  Takashi Ando ,  REINALDO VEGA ,  Cheng Chi

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistive random access memory (ReRAM) device is provided. The ReRAM device includes a stack structure including a first electrode, a metal oxide layer in contact with the first electrode, and a second electrode in contact with the metal oxide layer. A portion of the stack structure is modified by ion implantation, and the modified portion of the stack structure is offset from edges of the stack structure.