公开(公告)号：US20200251568A1

公开(公告)日：2020-08-06

申请号：US16745049

申请日：2020-01-16

Applicant: International Business Machines Corporation

Inventor： Ruqiang Bao ,  Michael A. Guillorn ,  Terence Hook ,  Robert R. Robison ,  Reinaldo Vega ,  Tenko Yamashita

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/06 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/786

Abstract: One example of an apparatus includes a conducting channel region. The conducting channel region includes a plurality of epitaxially grown, in situ doped conducting channels arranged in a spaced apart relation relative to each other. A source positioned at a first end of the conducting channel region, and a drain positioned at a second end of the conducting channel region. A gate surrounds all sides of the conducting channel region and fills in spaces between the plurality of epitaxially grown, in situ doped conducting channels.